Datasheet > AS110N10S-Q1

AS110N10S-Q1

更新时间： 2024-06-27 12:08:47

品牌	Logo	应用领域
安邦 - ANBON		/
页数	文件大小	规格书
6页	1041K
描述
DFN5*6-8L

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中文翻译

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数据手册

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AS110N10S-Q1 数据手册

AS110N10S-Q1

N-Channel Super Trench Power MOSFET

Product Summary

V_(BR)DSS

R_DS(on)MAX

5.0mΩ@10V

6.5mΩ@4.5V

I_D

100V

110A

Feature

Application



Split gate trench MOSFET technology



Power switching application

DC-DC converter

Excellent package for heat dissipation

High density cell design for low Rds(on)

Suffix "-Q1" for AEC-Q101



Uninterruptible power supply

Package

Circuit diagram

DFN5X6-8L

Marking

110N10

XXXXX

Document ID

AS-1150331

Issued Date

2013/03/08

Revised Date

2021/05/22

Revision

Page.

Page 1

12 3 4 5 6

中文翻译

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