Datasheet > APX8132HAI-TRG

APX8132HAI-TRG

更新时间： 2024-01-02 17:06:16

品牌	Logo	应用领域
茂达 - ANPEC		/
页数	文件大小	规格书
13页	194K
描述
Hall Effect Micro Switch IC

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中文翻译

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数据手册

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APX8132HAI-TRG 数据手册

APX8132H

Absolute Maximum Ratings T_A= 25°C unless otherwise noted^(Note1)

Symbol

V_DD

Parameter

Rating

Unit

Supply Voltage

V_OUT

I_OUT

Output Voltage

±1

Output Current

T_J

Junction Temperature Range

Storage Temperature Range

150

°C

T_STG

-65 to +150

Note1: Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are

stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under "recom-

mended operating conditions" is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device

reliability.

Thermal Characteristics

Symbol

Parameter

Typical Value

Unit

Junction-to-Ambient Resistance in Free Air ^{(Note 2)}

^oC/W

SOT-23

TSOT-23

260

275

q_JA

Junction-to-Case Resistance in Free Air ^{(Note 2)}

Power Dissipation, T_A=25^oC

^oC/W

SOT-23

TSOT-23

145

152

q_JC

P_D

SOT-23

TSOT-23

0.385

0.364

Note 2: q_JAis measured with the component mounted on a high effective thermal conductivity test board in free air.

Electrical Characteristics T_A= 25°C, V_DD=3V unless otherwise noted

APX8132H

Symbol

Characteristic

Test Conditions

Unit

Min.

Typ.

Max.

3.5

V_DD

Supply Voltage Range

Operating

2.5

Average

I_DD

Supply Current

Awake

1.2

Sleep

I_OFF

V_OH

Output Leakage Current

Output High Voltage

V_OUT= V_DD, B_RPN<B<B_RPS

1.0

V_DD

-0.4

I_OUT=-1mA

I_OUT=1mA

V_DD

V_OL

t_awake

t_period

d.c.

f_c

Output Low Voltage

Wake up Time

Period

180

Duty Cycle

0.3

Chopping Frequency

kHz

www.anpec.com.tw

Rev. A.1 - Aug., 2014

123 4 5 6 7...13

中文翻译

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