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AP2191FMG-7 PDF预览

AP2191FMG-7

更新时间: 2024-02-25 21:09:07
品牌 Logo 应用领域
美台 - DIODES 驱动光电二极管接口集成电路驱动器
页数 文件大小 规格书
17页 1155K
描述
Buffer/Inverter Based Peripheral Driver, 1 Driver, 2A, PDSO6, GREEN, DFN-6

AP2191FMG-7 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DFN
包装说明:HVSON, SOLCC6,.08,20针数:6
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:2.11
内置保护:TRANSIENT; OVER CURRENT; UNDER VOLTAGE驱动器位数:1
接口集成电路类型:BUFFER OR INVERTER BASED PERIPHERAL DRIVERJESD-30 代码:R-PDSO-N6
JESD-609代码:e3长度:2.0125 mm
湿度敏感等级:3功能数量:1
端子数量:6最高工作温度:85 °C
最低工作温度:-40 °C输出电流流向:SINK
最大输出电流:1.5 A标称输出峰值电流:2 A
封装主体材料:PLASTIC/EPOXY封装代码:HVSON
封装等效代码:SOLCC6,.08,20封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE峰值回流温度(摄氏度):260
电源:3/5 V认证状态:Not Qualified
座面最大高度:0.605 mm子类别:Peripheral Drivers
最大供电电压:5.5 V最小供电电压:2.7 V
标称供电电压:5 V表面贴装:YES
温度等级:INDUSTRIAL端子面层:Matte Tin (Sn)
端子形式:NO LEAD端子节距:0.5 mm
端子位置:DUAL处于峰值回流温度下的最长时间:40
宽度:1.81 mmBase Number Matches:1

AP2191FMG-7 数据手册

 浏览型号AP2191FMG-7的Datasheet PDF文件第1页浏览型号AP2191FMG-7的Datasheet PDF文件第2页浏览型号AP2191FMG-7的Datasheet PDF文件第4页浏览型号AP2191FMG-7的Datasheet PDF文件第5页浏览型号AP2191FMG-7的Datasheet PDF文件第6页浏览型号AP2191FMG-7的Datasheet PDF文件第7页 
AP2181/ AP2191  
Functional Block Diagram  
AP2181, AP2191  
Current  
Sense  
IN  
OUT  
UVLO  
Current  
Limit  
Driver  
EN  
FLG  
Deglitch  
Thermal  
Sense  
GND  
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)  
Symbol  
Parameter  
Human Body Model ESD Protection  
Ratings  
Units  
ESD HBM  
4
kV  
Machine Model ESD Protection  
for MSOP-8EP, SOT25 Packages  
400  
V
V
ESD MM  
Machine Model ESD Protection  
for U-DFN2018-6, SO-8 Packages  
300  
Input Voltage  
6.5  
VIN +0.3  
6.5  
V
V
VIN  
VOUT  
Output Voltage  
Enable Voltage  
V
VEN , VFLG  
ILOAD  
TJ(MAX)  
TST  
Maximum Continuous Load Current  
Maximum Junction Temperature  
Storage Temperature Range (Note 4)  
Internal Limited  
+150  
A
°C  
°C  
-65 to +150  
Caution: Stresses greater than the 'Absolute Maximum Ratings' specified above, may cause permanent damage to the device. These are stress ratings only;  
functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability may be  
affected by exposure to absolute maximum rating conditions for extended periods of time.  
Semiconductor devices are ESD sensitive and may be damaged by exposure to ESD events. Suitable ESD precautions should be taken when handling  
and transporting these devices  
Note:  
4. UL Recognized Rating from -30°C to +70°C (Diodes qualified TST from -65°C to +150°C).  
Recommended Operating Conditions (@TA = +25°C, unless otherwise specified.)  
Symbol  
VIN  
Parameter  
Min  
Max  
Units  
Input Voltage  
2.7  
5.5  
V
Output Current  
0
1.5  
A
IOUT  
TA  
Operating Ambient Temperature  
High-Level Input Voltage on EN or  
Low-Level Input Voltage on EN or  
-40  
+85  
°C  
VIH  
2.0  
0
VIN  
0.8  
V
V
EN  
VIL  
EN  
3 of 17  
www.diodes.com  
March 2015  
© Diodes Incorporated  
AP2181/ AP2191  
Document number: DS31563 Rev. 8 - 2  

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