AN1A4Z

更新时间： 2024-02-06 07:16:37

品牌	Logo	应用领域
日电电子 - NEC		晶体小信号双极晶体管开关
页数	文件大小	规格书
4页	83K
描述
COMPOUND TRANSISTOR

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

AN1A4Z 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

AN1A4Z 数据手册

DATA SHEET

COMPOUND TRANSISTOR

AN1A4Z

on-chip resistor PNP silicon epitaxial transistor

For mid-speed switching

FEATURES

PACKAGE DRAWING (UNIT: mm)

•

On-chip bias resistor

(R¹= 10 kΩ)

•

Complementary transistor with AA1A4Z

ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

Parameter

Symbol

V^CBO

V^CEO

V^EBO

I^C(DC)

I^C(pulse)*

P^T

Ratings

−60

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current (DC)

Collector current (Pulse)

Total power dissipation

Junction temperature

Storage temperature

−50

−5

−100

−200

250

°C

T^j

150

−55 to +150

T^stg

* PW ≤ 10 ms, duty cycle ≤ 50 %

ELECTRICAL CHARACTERISTICS (Ta = 25°C)

Parameter

Collector cutoff current

DC current gain

Symbol

I^CBO

Conditions

V^CB= −50 V, I^E= 0

MIN.

TYP.

MAX.

−100

600

Unit

−

V^CE= −5.0 V, I^C= −5.0 mA

V^CE= −5.0 V, I^C= −50 mA

I^C= −5.0 mA, I^B= −0.25 mA

V^CE= −5.0 V, I^C= −100 µA

V^CE= −0.2 V, I^C= −5.0 mA

h^FE1**

h^FE2**

V^CE(sat)**

V^IL**

V^IH**

R¹

135

100

190

170

−

DC current gain

−0.07

−0.57

−0.9

−0.2

−0.5

Collector saturation voltage

Low level input voltage

High level input voltage

Input resistance

−2.0

kΩ

µs

7.0

13.0

0.2

5.0

6.0

V^CC= −5.0 V, R^L= 1.0 kΩ

V^I= −5.0 V, PW = 2.0 µs

duty cycle≤2 %

Turn-on time

t^on

Storage time

t^stg

Turn-off time

t^off

** Pulse test PW ≤ 350 µs, duty cycle ≤ 2 %

h^FECLASSIFICATION

Marking

h^FE1

135 to 270

200 to 400

300 to 600

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. D16166EJV0DS00 (1st edition)

Date Published April 2002 N CP(K)

Printed in Japan

2002

1998

12 3 4

下载PDF

与AN1A4Z相关器件

型号	品牌	描述	获取价格	数据表
AN1A4Z(C)	RENESAS	AN1A4Z(C)	获取价格
AN1A4Z-A	NEC	暂无描述	获取价格
AN1A4Z-A	RENESAS	100mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, SC-43B, 3 PIN	获取价格
AN1A4Z-K	NEC	暂无描述	获取价格
AN1A4ZK(C)	RENESAS	AN1A4ZK(C)	获取价格
AN1A4ZK(C)-T	RENESAS	AN1A4ZK(C)-T	获取价格