5秒后页面跳转
AMS1009AS PDF预览

AMS1009AS

更新时间: 2024-02-26 10:14:55
品牌 Logo 应用领域
ADMOS 二极管光电二极管
页数 文件大小 规格书
4页 39K
描述
VOLTAGE REFERENCE DIODE

AMS1009AS 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
包装说明:SOP, SOP8,.25Reach Compliance Code:unknown
风险等级:5.81JESD-30 代码:R-PDSO-G8
端子数量:8最高工作温度:70 °C
最低工作温度:标称输出电压:2.5 V
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP8,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE认证状态:Not Qualified
子类别:Voltage References表面贴装:YES
最大电压温度系数:25 ppm/ °C温度等级:COMMERCIAL
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL微调/可调输出:NO
最大电压容差:0.4%Base Number Matches:1

AMS1009AS 数据手册

 浏览型号AMS1009AS的Datasheet PDF文件第1页浏览型号AMS1009AS的Datasheet PDF文件第3页浏览型号AMS1009AS的Datasheet PDF文件第4页 
AMS1009  
ABSOLUTE MAXIMUM RATINGS (Note 1)  
Reverse Current  
20mA  
Soldering information  
Forward Current  
Operating Temperature Range  
Storage temperature  
10mA  
0°C to 70°C  
-55°C to +150°C  
TO-92 package: 10 sec.  
SOIC package: Vapor phase (60 sec)  
Infrared (15 sec.)  
260°C  
215°C  
220°C  
ELECTRICAL CHARACTERISTICS  
Electrical Characteristics at IR = 1 mA, and TA = +25°C unless otherwise specified.  
AMS1009A  
AMS1009B  
Parameter  
Conditions  
Units  
Min  
Typ  
Max  
Min  
Typ  
Max  
Reverse Breakdown Voltage  
Reverse Dynamic Impedance  
2.495  
2.500  
2.505  
2.490  
2.500  
2.510  
V
0.2  
0.6  
0.2  
1.0  
W
0.4  
1.4  
0.4  
1.4  
Reverse Breakdown Voltage  
Change with current  
2.6  
10  
2.6  
10  
mV  
400mA £IR £10mA  
3
12  
3
12  
Temperature Stability  
1.8  
15  
4
1.8  
15  
4
mV  
TMIN £ TA £ TMAX  
0°C £ TA £ 70°C  
Average Temperature Coeff.  
25  
25  
ppm/°C  
Long Term Stability (Note 4)  
20  
20  
ppm  
TA=25°C±.1°C  
T = 1000 Hr  
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is  
intended to be functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The  
guaranteed specifications apply only for the test conditions listed.  
Note 2: For elevated temperature operation, Tj max is +125°C  
Thermal Resistance  
TO-92  
170°C/W (0.125” leads)  
SO-8  
165°C/W  
j
JA (junction to ambient)  
Note 3: Parameters identified with boldface type apply at temperature extremes. All other numbers apply at TA = TJ = 25°C.  
Note 4: The average temperature coefficient is defined as the maximum deviation of reference voltage at all measured temperatures between the operating TMAX  
and TMIN, divided by TMAX - TMIN. The measured temperatures are 0°C, 25°C and 70°C.  
TYPICAL PERFORMANCE CHARACTERISTICS  
Reverse Characteristics  
Reverse Voltage Change  
Response Time  
10-1  
10-2  
10-3  
5
2.5  
2.0  
OUTPUT  
4
5k  
3
1.0  
INPUT  
OUTPUT  
2
TJ =25° C  
TJ =70° C  
0
~
~
~
~
10  
10-4  
10-5  
TJ = 0° C  
1
INPUT  
4
0
0
0
0.5  
1.8  
2.2  
4
12  
16  
1.0  
1.4  
2.6  
8
20  
0
1
20  
REVERSE VOLTAGE (V)  
REVERSE CURRENT (mA)  
TIME (ms)  
Advanced Monolithic Systems, Inc. 6680B Sierra Lane, Dublin, CA 94568 Phone (925) 556-9090 Fax (925) 556-9140  

与AMS1009AS相关器件

型号 品牌 描述 获取价格 数据表
AMS1009B ADMOS VOLTAGE REFERENCE DIODE

获取价格

AMS1009BN ADMOS VOLTAGE REFERENCE DIODE

获取价格

AMS1009BS ADMOS VOLTAGE REFERENCE DIODE

获取价格

AMS1027 AMS On Board Power MOSFET

获取价格

AMS104Y PANASONIC Analog Circuit

获取价格

AMS1051 AMS The AMS1501 series of adjustable and fixed low dropout voltage regulators are designed to

获取价格