[1]
Table 1. Absolute Maximum Ratings
Symbol
Parameters and Test Conditions
Positive Drain Voltage
Unit
V
Minimum
Maximum
7.5
V
dd
-
I
Total Drain Current
mA
W
-
ꢀ35
dd
P
DC Power Dissipation
-
ꢀ.0
dc
P
RF CW Input Power
dBm
°C
-
20
in
T
ch
Operating Channel Temperature
Storage Case Temperature
-
+ꢀ50
+ꢀ50
+260
T
stg
°C
-65
-
T
max
Maximum Assembly Temperature (20 sec max)
°C
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to this device.
The absolute maximum ratings for Vdd, Idd, Pdc and Pin were determined at an ambient temperature of 25°C unless noted otherwise.
[1]
Table 2. DC Specifications
Symbol
Parameters and Test Conditions
Recommended Drain Supply Voltage
Total Drain Supply Current
Unit
V
Minimum
Typical
Maximum
V
dd
-
5
-
I
dd
mA
°C/W
70
-
95
28
ꢀ30
-
[2]
q
Thermal Resistance
ch-b
Notes:
1. Ambient operation temperature T = 25°C unless otherwise noted.
A
2. Channel-to-board Thermal Resistance is measured using Infrared Microscopy method.
[2,3]
Table 3. RF Specifications
(T = 25°C, Freq = 18GHz, Vdd = 5V, Idd = 95mA)
A
Symbol
Parameters and Test Conditions
Unit
dB
Minimum
Typical
ꢀ7.5
ꢀꢀ.5
ꢀꢀ.6
-43.0
ꢀ4.8
22.5
5.ꢀ
Maximum
2
[ꢀ,4]
|S2ꢀ|
Small signal Gain
Input Return Loss
ꢀ5.5
ꢀ9.5
RLin
dB
-
-
-
-
-
-
-
RLout
Output Return Loss
dB
-
2
|Sꢀ2|
Reverse Isolation
dB
-
PꢀdB
OIP3
NF
Output Power at ꢀdB Gain Compression
Output 3rd Order Intercept Point
dBm
dBm
dB
-
-
[ꢀ,4]
Noise Figure
7.0
Notes:
1. Typical value determined from a sample size of 500 parts from 2 wafers.
2. Small/large signal data measured in a fully de-embedded test fixture at T = 25 degree Celsius.
A
3. Specifications are derived from measurements in a 50 Ohm test environment. Aspects of the amplifier performance may be improved over a
narrower bandwidth by application of additional conjugate, linearity, or low noise matching.
4. All tested parameters guaranteed with measurement accuracy 0.5 dB for NF and 1.0 dB for gain.
2