[1]
AMMC-6220 DC Specifications/Physical Properties
Symbol
Parameters and Test Conditions
Units
Min.
Typ.
Max.
Id
DrainꢀSupplyꢀCurrentꢀ
mA
55
70
(underꢀanyꢀRFꢀpowerꢀdriveꢀandꢀtemperature)
(Vd=3.0ꢀV)
Vg
GateꢀSupplyꢀOperatingꢀVoltage
ꢀ(Id(Q)ꢀ=ꢀ800ꢀ(mA))
V
NA
25
qch-b
ThermalꢀResistance[2]
°C/W
(Backsideꢀtemperature,ꢀTbꢀ=ꢀ25°C)
Notes:
1.ꢀ AmbientꢀoperationalꢀtemperatureꢀT =25°Cꢀunlessꢀotherwiseꢀnoted.
A
2.ꢀ Channel-to-backsideꢀThermalꢀResistanceꢀ(q
)ꢀ=ꢀ26°C/WꢀatꢀT
ꢀ(T )ꢀ=ꢀ34°Cꢀasꢀmeasuredꢀusingꢀinfraredꢀmicroscopy.ꢀThermalꢀResistanceꢀatꢀ
ch-b
channel c
backsideꢀtemperatureꢀ(T )ꢀ=ꢀ25°Cꢀcalculatedꢀfromꢀmeasuredꢀdata.
b
[3, ꢀ, 5]
AMMC-6220 RF Specifications
(T = 25°C, V =3.0 V, I
55 mA, Z =50 Ω)
A
d
d(Q)=
o
Symbol
Parameters and Test Conditions
Units
Minimum
Typical
Maximum
Sigma
Gain
Small-signalꢀGain[6]
dB
21
23
0.30
NF
NoiseꢀFigureꢀintoꢀ50 W
dB
7-10ꢀGHzꢀ=ꢀ2.1
10-16ꢀGHzꢀ=ꢀ1.8
16-20ꢀGHzꢀ=ꢀ2.0
8ꢀGHzꢀ=ꢀ2.4
12ꢀGHzꢀ=ꢀ2.2
18ꢀGHzꢀ=ꢀ2.4
0.10
P-1dB
OIP3
OutputꢀPowerꢀatꢀ1dBꢀGainꢀCompres-
sion
dBm
dBm
+9
0.87
1.20
ThirdꢀOrderꢀInterceptꢀPoint;ꢀ
+19
Df=100MHz;ꢀPin=-35dBm
RLin
RLout
Isol
InputꢀReturnꢀLoss[6]
OutputꢀReturnꢀLoss[6]
ReverseꢀIsolation[6]
dB
dB
dB
-12
-16
-45
-10
-10
0.31
0.68
0.50
Notes:
3.ꢀ Small/Largeꢀ-signalꢀdataꢀmeasuredꢀinꢀwaferꢀformꢀT ꢀ=ꢀ25°C.
A
4.ꢀ 100%ꢀon-waferꢀRFꢀtestꢀisꢀdoneꢀatꢀfrequencyꢀ=ꢀ8,ꢀ12,ꢀandꢀ18ꢀGHz.
5.ꢀ Specificationsꢀareꢀderivedꢀfromꢀmeasurementsꢀinꢀaꢀ50ꢀΩꢀtestꢀenvironment.ꢀAspectsꢀofꢀtheꢀamplifierꢀperformanceꢀmayꢀbeꢀimprovedꢀoverꢀaꢀ
moreꢀnarrowꢀbandwidthꢀbyꢀapplicationꢀofꢀadditionalꢀconjugate,ꢀlinearity,ꢀorꢀlowꢀnoiseꢀ(Γopt)ꢀmatching.
6.ꢀ Asꢀderivedꢀfromꢀmeasuredꢀs-parameters
USL
USL
LSL
1.ꢄ
1.8
1.9
-11.ꢃ -11.ꢁ -11 -10.ꢄ -10.ꢂ -10.1 -9.8 -9.ꢅ
ꢀꢀ
ꢀꢁ
ꢀꢂ
Gain at 12 GHz
Noise Figure at 12 GHz
Return Loss at 12 GHz
TypicalꢀdistributionꢀofꢀSmallꢀSignalꢀGain,ꢀNoiseꢀFigure,ꢀandꢀReturnꢀLoss.ꢀBasedꢀonꢀ1500ꢀpartꢀsampledꢀoverꢀseveralꢀ
productionꢀlots.
ꢀ