AMMC-6140 DC Specifications/Physical Properties[1]
Symbol Parameters and Test Conditions
Units
mA
V
Min.
Typ.
27
Max.
40
Id
Drain Supply Current (under any RF power drive and temperature) (Vd= 4.5V)
Vg
Gate Supply Operating Voltage
-1.5
-1.2
25
-1.0
θch-b
Thermal Resistance[2] (Backside Temp. Tb = 25°C)
°C/W
Notes:
1. Ambient operational temperature TA= 25°C unless otherwise noted.
2. Channel-to-backside Thermal Resistance (θch-b) = 26°C/W at Tchannel (Tc) = 34°C as measured using infrared microscopy. Thermal Resistance at
backside temperature (Tb) = 25°C calculated from measured data.
RF Specifications[3, 4, 5] (TA = 25°C, Vd = 4.5 V, Id(Q)= 27 mA, Z0 = 50Ω)
Symbol
Fin
Parameters and Test Conditions
Input Frequency
Units
GHz
GHz
dBm
Minimum
Typical
10 to 20
20 to 40
-1
Sigma
Fout
Po
Output Frequency
Output Power[6]
-2
0.4
Fo
Fundamental Isolation (referenced to Po): 20–36 GHz
36–40 GHz
dBc
dBc
20
14
30
16
5.0
1.0
3Fo
3rd Harmonic Isolation (referenced to Po)
Output Power at 1dB Gain Compression
Input Return Loss[6]
dBc
25
1.2
P-1dB
RLin
RLout
SSB
dBm
dB
+5
-15
-10
-135
Output Return Loss[6]
dB
Single Sideband Phase Noise (100 KHz offset)
dBc/Hz
Notes:
3. Small/large signal data measured in wafer form TA = 25°C.
4. 100% on-wafer RF test is done at Pin = +4 dBm and output frequency = 20, 28, 36 and 40 GHz.
5. Specifications are derived from measurements in a 50Ω test environment. Aspects of the multiplier performance may be improved over a nar-
rower bandwidth by application of additional matching.
Typical distribution of Pout, 2nd Harmonic and 3rd Harmonic Suppression (Fin=14 GHz).
Based on 2500 parts sampled over several production lots.
21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36
22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37
-2
-1
3Fo Suppression (dBm) @ 42 GHz
2Fo Pout (dBm) @ 28G Hz
Fo Suppression (dBm) @ 14 GHz
2