Datasheet > AMMC-5023-W50

AMMC-5023-W50

更新时间： 2024-01-25 20:17:27

品牌	Logo	应用领域
安华高科 - AVAGO		放大器
页数	文件大小	规格书
9页	271K
描述
23 GHz Low Noise Amplifier (21.2-26.5 GHz)

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技术参数
数据手册

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AMMC-5023-W50 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	包装说明：	DIE OR CHIP
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8542.33.00.01	风险等级：	5.27
特性阻抗：	50 Ω	构造：	COMPONENT
增益：	17 dB	最大输入功率 (CW)：	15 dBm
最大工作频率：	26500 MHz	最小工作频率：	21200 MHz
封装等效代码：	DIE OR CHIP	电源：	5 V
射频/微波设备类型：	WIDE BAND LOW POWER	子类别：	RF/Microwave Amplifiers
最大压摆率：	35 mA

AMMC-5023-W50 数据手册

AMMC-5023

23 GHz Low Noise Ampliﬁer (21.2 – 26.5 GHz)

Data Sheet

Chip Size:

1880 x 600 µm (74 x 23.6 mils)

10 µm ( 0.4 mils)

100 10 µm (4 0.4 mils)

80 x 80 µm (3.1 x 3.1 mils), or larger

Chip Size Tolerance:

Chip Thickness:

Pad Dimensions:

Description

Features

• Frequency range: 21.2–26.5 GHz

• High gain: 23 dB

Avago’s AMMC-5023 is a high gain, low noise ampliﬁer

that operates from 21 GHz to over 30 GHz. By eliminating

the complex tuning and assembly processes typically

required by hybrid (discrete-FET) ampliﬁers, the AMMC-

5023 is a cost-eﬀective alternative in both 21.2–23.6 GHz

and 24.5–26.5 GHz communications receivers. The device

has good input and output match to 50 Ohm and is un-

conditionally stable to more than 40 GHz. The backside

of the chip is both RF and DC ground. This helps simplify

the assembly process and reduces assembly related per-

formance variations and costs. It is fabricated in a PHEMT

process to provide exceptional noise and gain perfor-

mance. For improved reliability and moisture protection,

the die is passivated at the active areas.

• Low noise ﬁgure: 2.3 dB

•

Input and output return loss: >10 dB

• Single supply bias: 5 volts, 28 mA

• Optional bias adjust

Applications

• Digital Radio Communication Systems (21.2–23.6 GHz

and 24.5–26.5 GHz)

• Any narrow band application within 21–26 GHz

• 24.1 GHz collision avoidance

• Front-end gain stage

Absolute Maximum Ratings^[1]

Symbol

V_D1, V_D2

V_G1, V_G2

I_D1

Parameters/Conditions

Drain Supply Voltage

Gate Supply Voltage

Units

Min.

Max.

0.4

Drain Supply Current

RF Input Power

dBm

°C

I_D2

P_in

T_ch

Channel Temperature

Operating Backside Temperature

Storage Temperature

Max. Assembly Temp (60 sec max)

+150

+140

+165

+300

T_b

°C

-55

-65

T_stg

°C

T_max

°C

Notes:

1. Absolute maximum ratings for continuous operation unless otherwise noted.

12 3 4 5 6 7...9

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