Datasheet > AMIS42671ICAB1RG

AMIS42671ICAB1RG

更新时间： 2022-12-16 16:08:32

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
13页	177K
描述
High Speed Autobaud CAN Transceiver

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AMIS42671ICAB1RG 数据手册

AMIS−42671

Table 3. ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Conditions

Min

−0.3

−45

Max

Unit

Supply Voltage

DC Voltage at Pin CANH

DC Voltage at Pin CANL

DC Voltage at Pin TxD

DC Voltage at Pin RxD

DC Voltage at Pin AUTB

0 < V < 5.25 V;

+45

CANH

CANL

TxD

No Time limit

0 < V < 5.25 V;

−45

−0.3

+45

No Time Limit

0.3

RxD

0.3

AUTB

0.3

DC Voltage at Pin V

REF

0.3

Transient Voltage at Pin CANH

Note 2

−150

+150

tran(CANH)

Transient Voltage at Pin CANL

tran(CANL)

esd

Electrostatic Discharge Voltage at All Pins

Note 3

Note 4

−4

−500

+500

Latch−up

Static Latch−up at all Pins

Storage Temperature

Note 5

100

°C

stg

−55

−40

+155

+125

+150

Ambient Temperature

Maximum Junction Temperature

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

2. Applied transient waveforms in accordance with ISO 7637 part 3, test pulses 1, 2, 3a, and 3b (see Figure 3).

3. Standardized human body model ESD pulses in accordance to MIL883 method 3015.7.

4. Static latch−up immunity: static latch−up protection level when tested according to EIA/JESD78.

5. Standardized charged device model ESD pulses when tested according to EOS/ESD DS5.3−1993.

Table 4. THERMAL CHARACTERISTICS

Symbol

Parameter

Conditions

Value

Unit

Thermal Resistance from Junction−to−Ambient in SO−8

In Free Air

150

k/W

th(vj−a)

package

)

Thermal Resistance from Junction−to−Substrate of Bare Die

In Free Air

k/W

th(vj−s

http://onsemi.com

1 2 345 6 7...13

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