Datasheet > AM29DL640H70EEN

AM29DL640H70EEN

更新时间： 2024-02-03 10:41:00

品牌	Logo	应用领域
超微 - AMD		闪存内存集成电路光电二极管
页数	文件大小	规格书
54页	881K
描述
64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory

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AM29DL640H70EEN 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
Reach Compliance Code：	not_compliant	风险等级：	5.92
Is Samacsys：	N	最长访问时间：	70 ns
备用内存宽度：	8	启动块：	BOTTOM/TOP
命令用户界面：	YES	通用闪存接口：	YES
数据轮询：	YES	JESD-30 代码：	R-PBGA-B63
JESD-609代码：	e0	内存密度：	67108864 bit
内存集成电路类型：	FLASH	内存宽度：	16
湿度敏感等级：	3	部门数/规模：	16,126
端子数量：	63	字数：	4194304 words
字数代码：	4000000	最高工作温度：	85 °C
最低工作温度：	-40 °C	组织：	4MX16
封装主体材料：	PLASTIC/EPOXY	封装代码：	FBGA
封装等效代码：	BGA63,8X12,32	封装形状：	RECTANGULAR
封装形式：	GRID ARRAY, FINE PITCH	并行/串行：	PARALLEL
电源：	3/3.3 V	认证状态：	Not Qualified
就绪/忙碌：	YES	部门规模：	8K,64K
最大待机电流：	0.000005 A	子类别：	Flash Memories
最大压摆率：	0.045 mA	表面贴装：	YES
技术：	CMOS	温度等级：	INDUSTRIAL
端子面层：	Tin/Lead (Sn/Pb)	端子形式：	BALL
端子节距：	0.8 mm	端子位置：	BOTTOM
切换位：	YES	类型：	NOR TYPE
Base Number Matches：	1

AM29DL640H70EEN 数据手册

For new designs, S29JL064H supersedes Am29DL640H and is the factory-recommended migration path for this

device. Please refer to the S29JL064H Datasheet for specifications and ordering information.

Am29DL640H

64 Megabit (8 M x 8-Bit/4 M x 16-Bit)

CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory

DISTINCTIVE CHARACTERISTICS

■ Ultra low power consumption (typical values)

ARCHITECTURAL ADVANTAGES

— 2 mA active read current at 1 MHz

— 10 mA active read current at 5 MHz

— 200 nA in standby or automatic sleep mode

■ Simultaneous Read/Write operations

— Data can be continuously read from one bank while

executing erase/program functions in another bank.

— Zero latency between read and write operations

■ Minimum 1 million erase cycles guaranteed per

sector

■ Flexible Bank^TMarchitecture

■ 20 year data retention at 125°C

— Read may occur in any of the three banks not being

written or erased.

— Reliable operation for the life of the system

— Four banks may be grouped by customer to achieve

desired bank divisions.

SOFTWARE FEATURES

■ Data Management Software (DMS)

— AMD-supplied software manages data programming,

enabling EEPROM emulation

■ Boot Sectors

— Top and bottom boot sectors in the same device

— Any combination of sectors can be erased

■ Supports Common Flash Memory Interface (CFI)

■ Manufactured on 0.13 µm process technology

■ Secured Silicon Sector: Extra 256 Byte sector

■ Erase Suspend/Erase Resume

— Suspends erase operations to read data from, or

program data to, a sector that is not being erased,

then resumes the erase operation.

— Factory locked and identifiable: 16 bytes available for

secure, random factory Electronic Serial Number;

verifiable as factory locked through autoselect

function. ExpressFlash option allows entire sector to

be available for factory-secured data

■ Data# Polling and Toggle Bits

— Provides a software method of detecting the status of

program or erase cycles

— Customer lockable: One-time programmable only.

Once locked, data cannot be changed

■ Unlock Bypass Program command

— Reduces overall programming time when issuing

multiple program command sequences

■ Zero Power Operation

— Sophisticated power management circuits reduce

power consumed during inactive periods to nearly

zero.

HARDWARE FEATURES

■ Ready/Busy# output (RY/BY#)

— Hardware method for detecting program or erase

cycle completion

■ Compatible with JEDEC standards

— Pinout and software compatible with

single-power-supply flash standard

■ Hardware reset pin (RESET#)

— Hardware method of resetting the internal state

machine to the read mode

PACKAGE OPTIONS

■ 63-ball Fine Pitch BGA

■ 48-pin TSOP

■ WP#/ACC input pin

— Write protect (WP#) function protects sectors 0, 1,

140, and 141, regardless of sector protect status

PERFORMANCE CHARACTERISTICS

— Acceleration (ACC) function accelerates program

timing

■ High performance

— Access time as fast as 55 ns

— Program time: 4 µs/word typical using accelerated

programming function

■ Sector protection

— Hardware method to prevent any program or erase

operation within a sector

— Temporary Sector Unprotect allows changing data in

protected sectors in-system

Publication# 27082 Rev: A Amendment/6

Issue Date: February 9, 2005

Refer to AMD’s Website (www.amd.com) for the latest information.

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与AM29DL640H70EEN相关器件

型号	品牌	获取价格	描述	数据表
AM29DL640H70EI	SPANSION	获取价格	64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Me
AM29DL640H70EI	AMD	获取价格	64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Me
AM29DL640H70EIN	AMD	获取价格	64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Me
AM29DL640H70EK	SPANSION	获取价格	Flash, 4MX16, 70ns, MO-142DD, TSOP-48
AM29DL640H70WHE	AMD	获取价格	64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Me
AM29DL640H70WHEN	AMD	获取价格	64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Me
AM29DL640H70WHI	SPANSION	获取价格	64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Me
AM29DL640H70WHI	AMD	获取价格	64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Me
AM29DL640H70WHIN	AMD	获取价格	64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Me
AM29DL640H90EE	AMD	获取价格	64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Me

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