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AM27C010-90DIB

更新时间： 2024-01-26 09:05:08
品牌 Logo 应用领域
飞索 - SPANSION 可编程只读存储器内存集成电路
页数 文件大小 规格书
12页 178K
描述
UVPROM, 128KX8, 90ns, CMOS, CDIP32, CERAMIC, DIP-32

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中文翻译

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AM27C010-90DIB 技术参数

生命周期：Contact Manufacturer包装说明：DIP,
Reach Compliance Code：unknown风险等级：5.55
Is Samacsys：N最长访问时间：90 ns
JESD-30 代码：R-CDIP-T32JESD-609代码：e0
长度：42.1005 mm内存密度：1048576 bit
内存集成电路类型：UVPROM内存宽度：8
功能数量：1端子数量：32
字数：131072 words字数代码：128000
工作模式：ASYNCHRONOUS最高工作温度：85 °C
最低工作温度：-40 °C组织：128KX8
封装主体材料：CERAMIC, METAL-SEALED COFIRED封装代码：DIP
封装形状：RECTANGULAR封装形式：IN-LINE
并行/串行：PARALLEL座面最大高度：5.588 mm
最大供电电压 (Vsup)：5.5 V最小供电电压 (Vsup)：4.5 V
标称供电电压 (Vsup)：5 V表面贴装：NO
技术：CMOS温度等级：INDUSTRIAL
端子面层：TIN LEAD端子形式：THROUGH-HOLE
端子节距：2.54 mm端子位置：DUAL
宽度：15.24 mmBase Number Matches：1

AM27C010-90DIB 数据手册

 浏览型号AM27C010-90DIB的Datasheet PDF文件第2页浏览型号AM27C010-90DIB的Datasheet PDF文件第3页浏览型号AM27C010-90DIB的Datasheet PDF文件第4页浏览型号AM27C010-90DIB的Datasheet PDF文件第5页浏览型号AM27C010-90DIB的Datasheet PDF文件第6页浏览型号AM27C010-90DIB的Datasheet PDF文件第7页 
FINAL  
Am27C010  
1 Megabit (128 K x 8-Bit) CMOS EPROM  
DISTINCTIVE CHARACTERISTICS  
■ Fast access time  
■ 100% Flashrite™ programming  
— Speed options as fast as 45 ns  
■ Low power consumption  
— Typical programming time of 16 seconds  
■ Latch-up protected to 100 mA from –1 V to  
V
+ 1 V  
CC  
— 20 µA typical CMOS standby current  
■ JEDEC-approved pinout  
■ High noise immunity  
■ Versatile features for simple interfacing  
— Both CMOS and TTL input/output compatibility  
— Two line control functions  
■ Single +5 V power supply  
■ ±10% power supply tolerance standard  
■ Standard 32-pin DIP, PDIP, and PLCC packages  
GENERAL DESCRIPTION  
The Am27C010 is a 1 Megabit, ultraviolet erasable pro-  
grammable read-only memory. It is organized as 128K  
words by 8 bits per word, operates from a single +5 V  
supply, has a static standby mode, and features fast  
single address location programming. Products are  
available in windowed ceramic DIP packages, as well  
as plastic one time programmable (OTP) PDIP and  
PLCC packages.  
thus eliminating bus contention in a multiple bus micro-  
processor system.  
AMD’s CMOS process technology provides high  
speed, low power, and high noise immunity. Typical  
power consumption is only 100 mW in active mode,  
and 100 µW in standby mode.  
All signals are TTL levels, including programming sig-  
nals. Bit locations may be programmed singly, in  
blocks, or at random. The device supports AMD’s  
Flashrite programming algorithm (100 µs pulses), re-  
sulting in a typical programming time of 16 seconds.  
Data can be typically accessed in less than 45 ns, al-  
lowing high-performance microprocessors to operate  
without any WAIT states. The device offers separate  
Output Enable (OE#) and Chip Enable (CE#) controls,  
BLOCK DIAGRAM  
V
Data Outputs  
DQ0–DQ7  
CC  
V
V
SS  
PP  
Output Enable  
Chip Enable  
and  
OE#  
CE#  
Output  
Buffers  
Prog Logic  
PGM#  
Y
Y
Gating  
Decoder  
A0–A16  
Address  
Inputs  
1,048,576  
Bit Cell  
Matrix  
X
Decoder  
10205J-1  
Publication# 10205 Rev: J Amendment/0  
Issue Date: July 2, 1999  
1234567...12

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与AM27C010-90DIB相关器件

型号 品牌 获取价格 描述 数据表
AM27C010-90EC ROCHESTER

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 		1 Megabit ( 128 K x 8-Bit ) CMOS EPROM Speed options as fast as 45 ns
AM27C010-90EI ROCHESTER

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 		1 Megabit ( 128 K x 8-Bit ) CMOS EPROM Speed options as fast as 45 ns
AM27C010-90JC ROCHESTER

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 		1 Megabit ( 128 K x 8-Bit ) CMOS EPROM Speed options as fast as 45 ns
AM27C010-90JC SPANSION

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 		OTP ROM, 128KX8, 90ns, CMOS, PQCC32, PLASTIC, LCC-32
AM27C010-90JC5 AMD

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 		1 Megabit (128 K x 8-Bit) CMOS EPROM
AM27C010-90JI ROCHESTER

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 		1 Megabit ( 128 K x 8-Bit ) CMOS EPROM Speed options as fast as 45 ns
AM27C010-90JI5 AMD

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 		1 Megabit (128 K x 8-Bit) CMOS EPROM
AM27C010-90LC ROCHESTER

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 		1 Megabit ( 128 K x 8-Bit ) CMOS EPROM Speed options as fast as 45 ns
AM27C010-90LCB ROCHESTER

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 		1 Megabit ( 128 K x 8-Bit ) CMOS EPROM Speed options as fast as 45 ns
AM27C010-90LI ROCHESTER

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 		1 Megabit ( 128 K x 8-Bit ) CMOS EPROM Speed options as fast as 45 ns

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