Datasheet > AGD8256A

AGD8256A

更新时间： 2024-02-14 13:32:34

品牌	Logo	应用领域
美国万代 - AOS		驱动双极性晶体管接口集成电路
页数	文件大小	规格书
14页	912K
描述
BUF OR INV BA IGBT/MOSFET DRV,

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技术参数
数据手册

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AGD8256A 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.8
接口集成电路类型：	BUFFER OR INVERTER BASED IGBT/MOSFET DRIVER	Base Number Matches：	1

AGD8256A 数据手册

AGD8156A / AGD8256A

Symbol

I_QBS

Parameter

Conditions

V_IN=0V

(all inputs are in the off

state)

Min.

Typ.

Max.

Units

Quiescent V_BSSupply Current (per 1-Phase)

Quiescent V_CCSupply Current (per 1phase)

High Level Output Voltage Drop, V_BIAS- V_O

Low Level Output Voltage Drop, V_O

0.3

0.9

0.4

200

120

I_QCC

V_OH

I_O=20mA, V_IN=5V

I_O=20mA, V_IN=0V

C_L=10nF

1.4

0.6

V_OL

I_O+

Output High Current with Capacitive Load

120

V_O=0V, PW≤10μs

(Single Pulse)

I_Opk+

I_O-

Peak Output High Short Circuit Pulsed Current

Output Low Current with Capacitive Load

Peak Output Low Short Circuit Pulsed Current

220

350

375

C_L=10nF

220

V_O=15V, PW≤10μs

(Single Pulse)

I_Opk-

V_IH

High Level Input Voltage

Low Level Input Voltage

Input Clamp Voltage (LIN, HIN, ITRIP, EN)

Input Bias Current

2.5

V_IL

5.6

650

0.8

5.9

850

V_CLAMP

I_HIN+

I_IN=100μA

V_HIN=5V

V_HIN=0V

V_LIN=5V

V_LIN=0V

5.2

I_HIN-

Input Bias Current

μA

I_LIN+

Input Bias Current

650

850

I_LIN-

Input Bias Current

V_RCIN,TH

I_RCIN

RCIN Positive Going Threshold

RCIN Input Bias Current

RCIN Low On-Resistance

ITRIP Positive Going Threshold

ITRIP Negative Going Threshold

ITRIP Hysteresis

μA

V_RCIN=0V or 15V

I=1.5mA

R_RCIN,ON

V_IT,TH+

V_IT,TH-

V_IT,Hys

I_ITRIP+

I_ITRIP-

V_EN,TH+

V_EN,TH-

I_EN+

0.46

0.4

0.06

100

0.5

0.42

High ITRIP Input Bias Current

Low ITRIP Input Bias Current

EN Positive Going Threshold

EN Negative Going Threshold

High EN Input Bias Current

Low EN Input Bias Current

Fault Low On-Resistance

V_ITRIP=4V

V_ITRIP=0V

μA

2.5

0.8

V_EN=5V

V_EN=0V

I=1.5mA

μA

I_EN-

R_FO,ON

100

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