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ADUM3123CRZ PDF预览

ADUM3123CRZ

更新时间： 2024-02-18 04:31:37
品牌 Logo 应用领域
亚德诺 - ADI 栅驱动双极性晶体管光电二极管接口集成电路驱动器
页数 文件大小 规格书
16页 524K
描述
Isolated Precision Gate Driver, 4 A Output

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ADUM3123CRZ 技术参数

是否无铅： 含铅是否Rohs认证： 符合
生命周期：Active包装说明：SOP, SOP8,.25
针数：8Reach Compliance Code：compliant
风险等级：2.2高边驱动器：NO
接口集成电路类型：BUFFER OR INVERTER BASED IGBT/MOSFET DRIVERJESD-30 代码：R-PDSO-G8
JESD-609代码：e3长度：4.9 mm
湿度敏感等级：3功能数量：1
端子数量：8最高工作温度：125 °C
最低工作温度：-40 °C标称输出峰值电流：4 A
封装主体材料：PLASTIC/EPOXY封装代码：SOP
封装等效代码：SOP8,.25封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
电源：3.3/5,4.5/18 V认证状态：Not Qualified
座面最大高度：1.75 mm子类别：MOSFET Drivers
最大供电电压：5.5 V最小供电电压：3 V
标称供电电压：3.3 V电源电压1-最大：18 V
电源电压1-分钟：4.5 V电源电压1-Nom：12 V
表面贴装：YES技术：CMOS
温度等级：AUTOMOTIVE端子面层：Matte Tin (Sn)
端子形式：GULL WING端子节距：1.27 mm
端子位置：DUAL处于峰值回流温度下的最长时间：30
断开时间：0.064 µs接通时间：0.064 µs
宽度：3.9 mmBase Number Matches：1

ADUM3123CRZ 数据手册

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Isolated Precision Gate Driver,  
4.0 A Output  
Data Sheet  
ADuM3123  
FEATURES  
GENERAL DESCRIPTION  
4.0 A output short-circuit pulsed current  
Isolated working voltage  
Secondary side to input side: 537 V  
High frequency operation: 1 MHz maximum  
3.3 V to 5 V input logic  
4.5 V to 18 V output drive  
Undervoltage lockout (UVLO): 2.8 V VDD1  
Precise timing characteristics  
The ADuM31231 is a 4.0 A isolated, single channel driver that  
employs Analog Devices, Inc., iCoupler® technology to provide  
precision isolation. The ADuM3123 provides 3000 V rms  
isolation in the narrow-body, 8-lead SOIC package. Combining  
high speed CMOS and monolithic transformer technology,  
these isolation components provide outstanding performance  
characteristics superior to alternatives such as the combination  
of pulse transformers and gate drivers.  
64 ns maximum isolator and driver propagation delay  
Complementary metal oxide semiconductor (CMOS) input  
logic levels  
High common-mode transient immunity: >25 kV/μs  
High junction temperature operation: 125°C  
Default low output  
The ADuM3123 operates with an input supply ranging from  
3.0 V to 5.5 V, providing compatibility with lower voltage  
systems. In comparison to gate drivers employing high voltage  
level translation methodologies, the ADuM3123 offers the  
benefit of true, galvanic isolation between the input and the  
output. The output can continuously operate up to 380 V rms  
relative to the input.  
Safety and regulatory approvals (pending)  
UL recognition per UL 1577  
As a result, the ADuM3123 provides reliable control over the  
switching characteristics of IGBT/MOSFET configurations over  
a wide range of positive and negative switching voltages.  
3000 V rms for 1 minute SOIC long package  
CSA Component Acceptance Notice 5A  
VDE certificate of conformity (pending)  
DIN V VDE V 0884-10 (VDE V 0884-10):2006-12  
Maximum working insulation voltage (VIORM) = 560 V peak  
Narrow body, 8-lead SOIC  
APPLICATIONS  
Switching power supplies  
Isolated gate bipolar transistors (IGBT)/MOSFET gate drives  
Industrial inverters  
FUNCTIONAL BLOCK DIAGRAM  
ADuM3123  
1
8
V
V
V
DD1  
DD2  
O
ENCODE  
DECODE  
2
3
7
6
V
I
DISABLE  
GND  
NIC  
4
5
GND  
1
2
NIC = NOT INTERNALLY CONNECTED  
Figure 1.  
1 Protected by U.S. Patents 5,952,849; 6,873,065; 7,075,239. Other patents pending.  
Rev. 0 Document Feedback  
Information furnished by Analog Devices is believed to be accurate and reliable. However, no  
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other  
rights of third parties that may result from its use. Specifications subject to change without notice. No  
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.  
Trademarks and registeredtrademarks arethe property of their respective owners.  
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.  
Tel: 781.329.4700  
Technical Support  
©2015 Analog Devices, Inc. All rights reserved.  
www.analog.com  
 
 
 
 
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