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ADP150ACBZ-2.6-R7 PDF预览

ADP150ACBZ-2.6-R7

更新时间： 2024-02-18 21:30:53
品牌 Logo 应用领域
亚德诺 - ADI 线性稳压器IC调节器电源电路输出元件PC
页数 文件大小 规格书
20页 556K
描述
Ultralow Noise, 150 mA CMOS Linear Regulator

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ADP150ACBZ-2.6-R7 技术参数

是否无铅： 含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：BGA
包装说明：VFBGA, BGA4,2X2,16针数：4
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8542.39.00.01风险等级：1.63
Samacsys Confidence：Samacsys Status：Released
Schematic Symbol：https://componentsearchengine.com/symbol.php?partID=579213PCB Footprint：https://componentsearchengine.com/footprint.php?partID=579213
Samacsys PartID：579213Samacsys Image：https://componentsearchengine.com/Images/9/ADP150ACBZ-2.6-R7.jpg
Samacsys Thumbnail Image：https://componentsearchengine.com/Thumbnails/1/ADP150ACBZ-2.6-R7.jpgSamacsys Pin Count：4
Samacsys Part Category：Integrated CircuitSamacsys Package Category：Other
Samacsys Footprint Name：BGA4C40P2X2_76X76X66Samacsys Released Date：2017-01-11 11:21:59
Is Samacsys：N可调性：FIXED
最大回动电压 1：0.16 V标称回动电压 1：0.105 V
最大绝对输入电压：6.5 V最大输入电压：5.5 V
最小输入电压：2.2 VJESD-30 代码：S-PBGA-B4
JESD-609代码：e1长度：0.76 mm
最大电网调整率：0.00325%最大负载调整率：0.0234%
湿度敏感等级：1功能数量：1
输出次数：1端子数量：4
工作温度TJ-Max：125 °C工作温度TJ-Min：-40 °C
最高工作温度：125 °C最低工作温度：-40 °C
最大输出电流 1：0.15 A最大输出电压 1：2.639 V
最小输出电压 1：2.548 V标称输出电压 1：2.6 V
封装主体材料：PLASTIC/EPOXY封装代码：VFBGA
封装等效代码：BGA4,2X2,16封装形状：SQUARE
封装形式：GRID ARRAY, VERY THIN PROFILE, FINE PITCH包装方法：TAPE AND REEL
峰值回流温度（摄氏度）：260认证状态：Not Qualified
调节器类型：FIXED POSITIVE SINGLE OUTPUT LDO REGULATOR座面最大高度：0.66 mm
子类别：Other Regulators表面贴装：YES
技术：CMOS端子面层：TIN SILVER COPPER
端子形式：BALL端子节距：0.4 mm
端子位置：BOTTOM处于峰值回流温度下的最长时间：30
宽度：0.76 mmBase Number Matches：1

ADP150ACBZ-2.6-R7 数据手册

 浏览型号ADP150ACBZ-2.6-R7的Datasheet PDF文件第2页浏览型号ADP150ACBZ-2.6-R7的Datasheet PDF文件第3页浏览型号ADP150ACBZ-2.6-R7的Datasheet PDF文件第4页浏览型号ADP150ACBZ-2.6-R7的Datasheet PDF文件第6页浏览型号ADP150ACBZ-2.6-R7的Datasheet PDF文件第7页浏览型号ADP150ACBZ-2.6-R7的Datasheet PDF文件第8页 
ADP150  
ABSOLUTE MAXIMUM RATINGS  
Table 3.  
The junction-to-ambient thermal resistance (θ ) of the package  
JA  
is based on modeling and a calculation using a 4-layer board.  
The junction-to-ambient thermal resistance is highly dependent  
on the application and board layout. In applications where high  
maximum power dissipation exists, close attention to thermal  
Parameter  
Rating  
VIN to GND  
VOUT to GND  
−0.3 V to +6.5 V  
−0.3 V to VIN  
EN to GND  
−0.3 V to +6.5 V  
−65°C to +150°C  
−40°C to +125°C  
−40°C to +85°C  
JEDEC J-STD-020  
board design is required. The value of θcan vary, depending on  
JA  
Storage Temperature Range  
Operating Junction Temperature Range  
Operating Ambient Temperature Range  
Soldering Conditions  
PCB material, layout, and environmental conditions. The specified  
values of θ are based on a 4-layer, 4 inch × 3 inch circuit board.  
JA  
Refer to JESD 51-7 and JESD 51-9 for detailed information  
on the board construction. For additional information, see  
the AN-617 Application Note, MicroCSP™ Wafer Level Chip  
Scale Package.  
Stresses above those listed under Absolute Maximum Ratings  
may cause permanent damage to the device. This is a stress  
rating only; functional operation of the device at these or any  
other conditions above those indicated in the operational  
section of this specification is not implied. Exposure to absolute  
maximum rating conditions for extended periods may affect  
device reliability.  
ΨJB is the junction-to-board thermal characterization parameter  
with units of °C/W. ΨJB of the package is based on modeling and  
a calculation using a 4-layer board. The JESD51-12, Guidelines  
for Reporting and Using Package Thermal Information, states that  
thermal characterization parameters are not the same as thermal  
resistances. ΨJB measures the component power flowing through  
multiple thermal paths rather than a single path as in thermal  
resistance, θJB. Therefore, ΨJB thermal paths include convection  
from the top of the package as well as radiation from the package,  
factors that make ΨJB more useful in real-world applications.  
Maximum junction temperature (TJ) is calculated from the  
board temperature (TB) and power dissipation (PD) by  
THERMAL DATA  
Absolute maximum ratings apply individually only, not in  
combination. The ADP150 can be damaged when the junction  
temperature limits are exceeded. Monitoring ambient temperature  
does not guarantee that TJ is within the specified temperature  
limits. In applications with high power dissipation and poor  
thermal resistance, the maximum ambient temperature may  
have to be derated.  
TJ = TB + (PD × ΨJB)  
Refer to JESD51-8 and JESD51-12 for more detailed information  
about ΨJB.  
In applications with moderate power dissipation and low  
printed circuit board (PCB) thermal resistance, the maximum  
ambient temperature can exceed the maximum limit as long  
as the junction temperature is within specification limits. The  
junction temperature (TJ) of the device is dependent on the  
ambient temperature (TA), the power dissipation of the device (PD),  
and the junction-to-ambient thermal resistance of the package  
(θJA).  
THERMAL RESISTANCE  
θJA and ΨJB are specified for the worst-case conditions, that is, a  
device soldered in a circuit board for surface-mount packages.  
Table 4. Thermal Resistance  
Package Type  
θJA  
ΨJB  
43  
58  
Unit  
°C/W  
°C/W  
5-Lead TSOT  
4-Ball, 0.4 mm Pitch WLCSP  
170  
260  
Maximum junction temperature (TJ) is calculated from the  
ambient temperature (TA) and power dissipation (PD) by  
TJ = TA + (PD × θJA)  
ESD CAUTION  
Rev. A | Page 5 of 20  
 
 
 
 
 
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