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ADP1109AR-12 PDF预览

ADP1109AR-12

更新时间: 2024-02-16 03:25:23
品牌 Logo 应用领域
亚德诺 - ADI 转换器稳压器开关式稳压器或控制器电源电路开关式控制器光电二极管
页数 文件大小 规格书
8页 135K
描述
Micropower Low Cost Fixed 3.3 V, 5 V, 12 V and Adjustable DC-to-DC Converter

ADP1109AR-12 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:SOIC
包装说明:SOP,针数:8
Reach Compliance Code:unknown风险等级:5.63
模拟集成电路 - 其他类型:SWITCHING REGULATOR控制模式:VOLTAGE-MODE
控制技术:PULSE FREQUENCY MODULATION最大输入电压:12 V
最小输入电压:2 V标称输入电压:3 V
JESD-30 代码:R-PDSO-G8JESD-609代码:e0
长度:4.9 mm湿度敏感等级:NOT SPECIFIED
功能数量:1端子数量:8
最高工作温度:70 °C最低工作温度:
最大输出电流:1.2 A标称输出电压:12 V
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:COMMERCIAL
座面最大高度:1.75 mm表面贴装:YES
切换器配置:BOOST最大切换频率:120 kHz
温度等级:COMMERCIAL端子面层:TIN LEAD
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:3.9 mmBase Number Matches:1

ADP1109AR-12 数据手册

 浏览型号ADP1109AR-12的Datasheet PDF文件第2页浏览型号ADP1109AR-12的Datasheet PDF文件第3页浏览型号ADP1109AR-12的Datasheet PDF文件第4页浏览型号ADP1109AR-12的Datasheet PDF文件第5页浏览型号ADP1109AR-12的Datasheet PDF文件第7页浏览型号ADP1109AR-12的Datasheet PDF文件第8页 
ADP1109  
As previously mentioned, EL must be greater than PL/fOSC so  
that the ADP1109 can deliver the necessary power to the load.  
For best efficiency, peak current should be limited to 1 A or  
less. Higher switch currents will reduce efficiency because of  
increased saturation voltage in the switch. High peak current  
also increases output ripple. As a general rule, keep peak current  
as low as possible to minimize losses in the switch, inductor and  
diode.  
O utput Voltage Selection  
T he output voltage is fed back to the ADP1109 via resistors R1  
and R2 (Figure 5). When the voltage at the comparator’s invert-  
ing input falls below 1.25 V, the oscillator turns “on” and the  
output voltage begins to rise. T he output voltage is therefore set  
by the formula:  
R 2  
VOUT = 1. 25 V × 1 +  
(11)  
R1  
In practice, the inductor value is easily selected using the equa-  
tions above. For example, consider a supply that will generate  
12 V at 120 mA from a +5 V source. T he inductor power re-  
quired is, from Equation 1:  
Resistors R1 and R2 are provided internally on fixed-voltage  
versions of the ADP1109. In this case, a complete dc-dc con-  
verter requires only four external components.  
PL = (12 V + 0.5 V – 5 V) × (120 mA) = 900 mW  
(6)  
Capacitor Selection  
On each switching cycle, the inductor must supply:  
For optimum performance, the ADP1109s output capacitor  
must be carefully selected. Choosing an inappropriate capacitor  
can result in low efficiency and/or high output ripple.  
PL 900 mW  
=
= 7.5 µJ  
(7)  
fOSC 120 kHz  
Ordinary aluminum electrolytic capacitors are inexpensive, but  
often have poor Equivalent Series Resistance (ESR) and Equiva-  
lent Series Inductance (ESL). Low ESR aluminum capacitors,  
specifically designed for switch mode converter applications, are  
also available, and these are a better choice than general purpose  
devices. Even better performance can be achieved with tantalum  
capacitors, although their cost is higher. Very low values of ESR  
can be achieved by using OS-CON capacitors (Sanyo Corpora-  
tion, San Diego, CA). T hese devices are fairly small, available  
with tape-and-reel packaging, and have very low ESR.  
T he required inductor power is fairly low in this example, so  
the peak current can also be low. Assuming a peak current of  
600 mA as a starting point, Equation 4 can be rearranged to  
recommend an inductor value:  
VIN  
5 V  
L =  
t =  
5.5 µs = 45.8 µH  
(8)  
IL(MAX  
600 mA  
)
Substituting a standard inductor value of 33 µH, with 0.2 dc  
resistance, will produce a peak switch current of:  
D iode Selection  
In specifying a diode, consideration must be given to speed,  
forward voltage drop and reverse leakage current. When the  
ADP1109 switch turns off, the diode must turn on rapidly if  
high efficiency is to be maintained. Schottky rectifiers, as well as  
fast signal diodes such as the 1N4148, are appropriate. T he  
forward voltage of the diode represents power that is not  
delivered to the load, so VF must also be minimized. Again,  
Schottky diodes are recommended. Leakage current is especially  
important in low current applications, where the leakage can be  
a significant percentage of the total quiescent current.  
–1.0 Ω × 5.5 µs  
5 V  
33 µH  
IPEAK  
=
1 e  
= 768 mA  
(9)  
1. 0 Ω  
Once the peak current is known, the inductor energy can be  
calculated from Equation 5:  
2
1
EL  
=
33 µH × 768 mA = 9.7 µJ  
(10)  
(
)
(
)
2
T he inductor energy of 9.7 µJ is greater than the PL/fOSC re-  
quirement of 7.5 µJ, so the 33 µH inductor will work in this  
For most circuits, the 1N5818 is a suitable companion to the  
ADP1109. T his diode has a VF of 0.5 V at 1 A, 4 µA to 10 µA  
leakage, and fast turn-on and turn-off times. A surface mount  
version, the MBRS130T 3, is also available.  
application. By substituting other inductor values into the same  
equations, the optimum inductor value can be selected. When  
selecting an inductor, the peak current must not exceed the  
maximum switch current of 1.2 A. If the calculated peak current  
is greater than 1.2 A, either the input voltage must be increased  
or the load current decreased.  
For switch currents of 100 mA or less, a Schottky diode such as  
the BAT 85 provides a VF of 0.8 V at 100 mA and leakage less  
than 1 µA. A similar device, the BAT 54, is available in an  
SOT-23 package. Even lower leakage, in the 1 nA to 5 nA range,  
can be obtained with a 1N4148 signal diode.  
General purpose rectifiers, such as the 1N4001, are not suitable  
for ADP1109 circuits. T hese devices, which have turn-on times  
of 10 µs or more, are far too slow for switching power supply  
applications. Using such a diode “just to get started” will result  
in wasted time and effort. Even if an ADP1109 circuit appears  
to function with a 1N4001, the resulting performance will not  
be indicative of the circuit performance when the correct diode  
is used.  
–6–  
REV. 0  

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