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AD8512BRZ-REEL PDF预览

AD8512BRZ-REEL

更新时间: 2024-01-01 18:47:23
品牌 Logo 应用领域
亚德诺 - ADI 运算放大器放大器电路光电二极管
页数 文件大小 规格书
20页 471K
描述
Precision, Very Low Noise, Low Input Bias Current, Wide Bandwidth JFET Operational Amplifiers

AD8512BRZ-REEL 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOIC
包装说明:SOP, SOP8,.25针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.31.00.01风险等级:0.89
放大器类型:OPERATIONAL AMPLIFIER架构:VOLTAGE-FEEDBACK
最大平均偏置电流 (IIB):0.01 µA25C 时的最大偏置电流 (IIB):0.00008 µA
标称共模抑制比:100 dB频率补偿:YES
最大输入失调电压:800 µVJESD-30 代码:R-PDSO-G8
JESD-609代码:e3长度:4.9 mm
低-偏置:YES低-失调:YES
微功率:NO湿度敏感等级:1
负供电电压上限:-18 V标称负供电电压 (Vsup):-5 V
功能数量:2端子数量:8
最高工作温度:125 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP8,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
功率:NO电源:+-5/+-15 V
可编程功率:NO认证状态:Not Qualified
座面最大高度:1.75 mm标称压摆率:20 V/us
子类别:Operational Amplifier最大压摆率:5 mA
供电电压上限:18 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:JFET
温度等级:AUTOMOTIVE端子面层:Matte Tin (Sn)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
标称均一增益带宽:8000 kHz宽带:NO
宽度:3.9 mmBase Number Matches:1

AD8512BRZ-REEL 数据手册

 浏览型号AD8512BRZ-REEL的Datasheet PDF文件第3页浏览型号AD8512BRZ-REEL的Datasheet PDF文件第4页浏览型号AD8512BRZ-REEL的Datasheet PDF文件第5页浏览型号AD8512BRZ-REEL的Datasheet PDF文件第7页浏览型号AD8512BRZ-REEL的Datasheet PDF文件第8页浏览型号AD8512BRZ-REEL的Datasheet PDF文件第9页 
AD8510/AD8512/AD8513  
ABSOLUTE MAXIMUM RATINGS  
Table 3.  
Parameter  
Table 4. Thermal Resistance  
Package Type  
1
Rating  
θJA  
θJC  
45  
43  
36  
35  
Unit  
°C/W  
°C/W  
°C/W  
°C/W  
Supply Voltage  
Input Voltage  
18 V  
VS  
8-Lead MSOP (RM)  
8-Lead SOIC_N (R)  
14-Lead SOIC_N (R)  
14-Lead TSSOP (RU)  
210  
158  
120  
180  
Output Short-Circuit Duration to GND  
Storage Temperature Range  
Operating Temperature Range  
Junction Temperature Range  
Lead Temperature (Soldering, 10 sec)  
Observe derating curves  
−65°C to +150°C  
−40°C to +125°C  
−65°C to +150°C  
300°C  
1 θJA is specified for worst-case conditions, that is, θJA is specified for device  
soldered in circuit board for surface-mount packages.  
Electrostatic Discharge  
(Human Body Model)  
2000 V  
ESD CAUTION  
Stresses above those listed under Absolute Maximum Ratings  
may cause permanent damage to the device. This is a stress  
rating only; functional operation of the device at these or any  
other conditions above those indicated in the operational  
section of this specification is not implied. Exposure to absolute  
maximum rating conditions for extended periods may affect  
device reliability.  
Rev. H | Page 6 of 20  
 

AD8512BRZ-REEL 替代型号

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AD8512BR-REEL ADI

完全替代

Precision, Very Low Noise, Low Input Bias Current, Wide Bandwidth JFET Operational Amplifi
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AD8512BRZ ADI

类似代替

Precision, Very Low Noise, Low Input Bias Current, Wide Bandwidth JFET Operational Amplifi

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