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AD8279BRZ-R7 PDF预览

AD8279BRZ-R7

更新时间: 2024-01-23 23:47:33
品牌 Logo 应用领域
亚德诺 - ADI 仪表放大器放大器电路光电二极管PC
页数 文件大小 规格书
24页 513K
描述
Low Power, Wide Supply Range, Low Cost Difference Amplifiers,

AD8279BRZ-R7 技术参数

Source Url Status Check Date:2013-05-01 14:56:25.21是否无铅: 含铅
是否Rohs认证: 符合生命周期:Active
零件包装代码:SOIC包装说明:SOP, SOP14,.25
针数:14Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.33.00.01
风险等级:5.74Samacsys Confidence:3
Samacsys Status:Released2D Presentation:https://componentsearchengine.com/2D/0T/578734.3.1.png
Schematic Symbol:https://componentsearchengine.com/symbol.php?partID=578734PCB Footprint:https://componentsearchengine.com/footprint.php?partID=578734
3D View:https://componentsearchengine.com/viewer/3D.php?partID=578734Samacsys PartID:578734
Samacsys Image:https://componentsearchengine.com/Images/9/AD8279BRZ-R7.jpgSamacsys Thumbnail Image:https://componentsearchengine.com/Thumbnails/3/AD8279BRZ-R7.jpg
Samacsys Pin Count:14Samacsys Part Category:Integrated Circuit
Samacsys Package Category:Small Outline PackagesSamacsys Footprint Name:14-pin SOIC_N-
Samacsys Released Date:2017-01-11 11:21:59Is Samacsys:N
放大器类型:INSTRUMENTATION AMPLIFIER标称带宽 (3dB):0.55 MHz
最小共模抑制比:86 dB最大输入失调电压:200 µV
JESD-30 代码:S-PDSO-G14长度:8.65 mm
负供电电压上限:-18 V标称负供电电压 (Vsup):-15 V
最大非线性:0.0012%功能数量:1
端子数量:14最高工作温度:85 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP14,.25
封装形状:SQUARE封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED电源:+-2/+-18/2/36 V
认证状态:Not Qualified座面最大高度:1.75 mm
标称压摆率:1.4 V/us子类别:Instrumentation Amplifier
最大压摆率:0.4 mA供电电压上限:18 V
标称供电电压 (Vsup):15 V表面贴装:YES
温度等级:INDUSTRIAL端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:3.9 mm
Base Number Matches:1

AD8279BRZ-R7 数据手册

 浏览型号AD8279BRZ-R7的Datasheet PDF文件第4页浏览型号AD8279BRZ-R7的Datasheet PDF文件第5页浏览型号AD8279BRZ-R7的Datasheet PDF文件第6页浏览型号AD8279BRZ-R7的Datasheet PDF文件第8页浏览型号AD8279BRZ-R7的Datasheet PDF文件第9页浏览型号AD8279BRZ-R7的Datasheet PDF文件第10页 
AD8278/AD8279  
ABSOLUTE MAXIMUM RATINGS  
Table 6.  
2.0  
1.6  
1.2  
0.8  
0.4  
0
T
MAX = 150°C  
J
Parameter  
Rating  
Supply Voltage  
18 V  
Maximum Voltage at Any Input Pin  
Minimum Voltage at Any Input Pin  
Storage Temperature Range  
Specified Temperature Range  
Package Glass Transition Temperature (TG)  
−VS + 40 V  
+VS − 40 V  
−65°C to +150°C  
−40°C to +85°C  
150°C  
SOIC  
θ
= 121°C/W  
JA  
MSOP  
= 135°C/W  
θ
JA  
Stresses above those listed under Absolute Maximum Ratings  
may cause permanent damage to the device. This is a stress  
rating only; functional operation of the device at these or any  
other conditions above those indicated in the operational  
section of this specification is not implied. Exposure to absolute  
maximum rating conditions for extended periods may affect  
device reliability.  
–50  
–25  
0
25  
50  
75  
100  
125  
AMBIENT TEMERATURE (°C)  
Figure 3. Maximum Power Dissipation vs. Ambient Temperature  
SHORT-CIRCUIT CURRENT  
THERMAL RESISTANCE  
The AD8278 and AD8279 have built-in, short-circuit protection  
that limits the output current (see Figure 29 for more information).  
While the short-circuit condition itself does not damage the  
part, the heat generated by the condition can cause the part to  
exceed its maximum junction temperature, with corresponding  
negative effects on reliability. Figure 3 and Figure 29, combined  
with knowledge of the supply voltages and ambient temperature of  
the part, can be used to determine whether a short circuit will  
cause the part to exceed its maximum junction temperature.  
The θJA values in Table 7 assume a 4-layer JEDEC standard  
board with zero airflow.  
Table 7. Thermal Resistance  
Package Type  
8-Lead MSOP  
8-Lead SOIC  
θJA  
Unit  
°C/W  
°C/W  
°C/W  
135  
121  
105  
14-Lead SOIC  
MAXIMUM POWER DISSIPATION  
ESD CAUTION  
The maximum safe power dissipation for the AD8278 and  
AD8279 are limited by the associated rise in junction tempera-  
ture (TJ) on the die. At approximately 150°C, which is the glass  
transition temperature, the properties of the plastic change.  
Even temporarily exceeding this temperature limit may change  
the stresses that the package exerts on the die, permanently shifting  
the parametric performance of the amplifiers. Exceeding a  
temperature of 150°C for an extended period may result in a  
loss of functionality.  
Rev. C | Page 7 of 24  
 
 
 

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