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AD8277BRZ-R7 PDF预览

AD8277BRZ-R7

更新时间: 2024-01-25 01:25:22
品牌 Logo 应用领域
亚德诺 - ADI 放大器
页数 文件大小 规格书
20页 537K
描述
Low Power, Wide Supply Range, Low Cost Unity-Gain Difference Amplifiers

AD8277BRZ-R7 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOIC
包装说明:SOP, SOP14,.25针数:14
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.33.00.01风险等级:2.36
放大器类型:INSTRUMENTATION AMPLIFIER标称带宽 (3dB):0.55 MHz
最小共模抑制比:86 dB最大输入失调电压:200 µV
JESD-30 代码:R-PDSO-G14JESD-609代码:e3
长度:8.65 mm湿度敏感等级:1
负供电电压上限:-18 V标称负供电电压 (Vsup):-5 V
最大非线性:0.0005%功能数量:2
端子数量:14最高工作温度:85 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP14,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260电源:+-2/+-18/2/36 V
认证状态:Not Qualified座面最大高度:1.75 mm
标称压摆率:1.1 V/us子类别:Instrumentation Amplifier
最大压摆率:0.25 mA供电电压上限:18 V
标称供电电压 (Vsup):5 V表面贴装:YES
温度等级:INDUSTRIAL端子面层:Tin (Sn)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
宽度:3.9 mmBase Number Matches:1

AD8277BRZ-R7 数据手册

 浏览型号AD8277BRZ-R7的Datasheet PDF文件第2页浏览型号AD8277BRZ-R7的Datasheet PDF文件第3页浏览型号AD8277BRZ-R7的Datasheet PDF文件第4页浏览型号AD8277BRZ-R7的Datasheet PDF文件第6页浏览型号AD8277BRZ-R7的Datasheet PDF文件第7页浏览型号AD8277BRZ-R7的Datasheet PDF文件第8页 
AD8276/AD8277  
ABSOLUTE MAXIMUM RATINGS  
Table 4.  
2.0  
1.6  
1.2  
0.8  
0.4  
0
T
MAX = 150°C  
J
Parameter  
Rating  
14-LEAD SOIC  
= 105°C/W  
Supply Voltage  
18 V  
θ
JA  
Maximum Voltage at Any Input Pin  
Minimum Voltage at Any Input Pin  
Storage Temperature Range  
Specified Temperature Range  
Package Glass Transition Temperature (TG)  
−VS + 40 V  
+VS − 40 V  
−65°C to +150°C  
−40°C to +85°C  
150°C  
8-LEAD SOIC  
= 121°C/W  
θ
JA  
8-LEAD MSOP  
= 135°C/W  
θ
JA  
Stresses above those listed under Absolute Maximum Ratings  
may cause permanent damage to the device. This is a stress  
rating only; functional operation of the device at these or any  
other conditions above those indicated in the operational  
section of this specification is not implied. Exposure to absolute  
maximum rating conditions for extended periods may affect  
device reliability.  
–50  
–25  
0
25  
50  
75  
100  
125  
AMBIENT TEMERATURE (°C)  
Figure 3. Maximum Power Dissipation vs. Ambient Temperature  
SHORT-CIRCUIT CURRENT  
THERMAL RESISTANCE  
The AD8276/AD8277 have built-in, short-circuit protection  
that limits the output current (see Figure 25 for more information).  
While the short-circuit condition itself does not damage the  
part, the heat generated by the condition can cause the part to  
exceed its maximum junction temperature, with corresponding  
negative effects on reliability. Figure 3 and Figure 25, combined  
with knowledge of the supply voltages and ambient temperature of  
the part, can be used to determine whether a short circuit will  
cause the part to exceed its maximum junction temperature.  
The θJA values in Table 5 assume a 4-layer JEDEC standard  
board with zero airflow.  
Table 5.  
Package Type  
8-Lead MSOP  
8-Lead SOIC  
θJA  
Unit  
°C/W  
°C/W  
°C/W  
135  
121  
105  
14-Lead SOIC  
ESD CAUTION  
MAXIMUM POWER DISSIPATION  
The maximum safe power dissipation for the AD8276/AD8277  
is limited by the associated rise in junction temperature (TJ) on  
the die. At approximately 150°C, which is the glass transition  
temperature, the properties of the plastic change. Even temporarily  
exceeding this temperature limit may change the stresses that the  
package exerts on the die, permanently shifting the parametric  
performance of the amplifiers. Exceeding a temperature of 150°C  
for an extended period may result in a loss of functionality.  
Rev. A | Page 5 of 20  
 
 
 
 
 

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