Datasheet > AD8229_16

AD8229_16

更新时间： 2022-02-26 12:08:17

品牌	Logo	应用领域
亚德诺 - ADI		/
页数	文件大小	规格书
25页	1011K
描述
1 nV/âHz Low Noise 210Â°C Instrumentation Amplifier

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AD8229_16 数据手册

AD8229

Data Sheet

Parameter

Test Conditions/Comments

Min

Typ

Max

Unit

DYNAMIC RESPONSE

Small Signal Bandwidth –3 dB

G = 1

G = 10

G = 100

G = 1000

1.2

0.15

MHz

Settling Time 0.01%

G = 1

G = 10

G = 100

G = 1000

Settling Time 0.001%

G = 1

10 V step

0.75

0.65

0.85

µs

0.9

1.2

µs

G = 10

G = 100

G = 1000

Slew Rate

G = 1 to 100

V/µs

THD (FIRST FIVE HARMONICS)

G = 1

f = 1 kHz, R_L= 2 kΩ, V_OUT= 10 V p-p

–130

–116

–113

–111

0.0005

dBc

G = 10

G = 100

G = 1000

THD + Noise

GAIN²

f = 1 kHz, R_L= 2 kΩ, V_OUT= 10 V p-p, G = 100

G = 1 + (6 kΩ/R_G)

Gain Range

1000

V/V

Gain Error

V_OUT= 10 V

G = 1

G = 10

G = 100

G = 1000

0.01

0.05

0.1

0.03

0.3

Gain Nonlinearity

G = 1 to 1000

Gain vs. Temperature

G = 1

V_OUT= −10 V to +10 V

R_L= 10 kΩ

ppm

T_A= −40°C to +210°C

ppm/°C

G > 10

−100

INPUT

Impedance (Pin to Ground)³

Input Operating Voltage Range⁴

Over Temperature

OUTPUT

1.5||3

GΩ||pF

V_S= 5 V to 18 V for dual supplies

T_A= −40°C to +210°C

−V_S+ 2.8

+V_S− 2.5

Output Swing, R_L= 2 kΩ

High Temperature, SBDIP package

High Temperature, SOIC package

Output Swing, R_L= 10 kΩ

High Temperature, SBDIP package

High Temperature, SOIC package

Short-Circuit Current

−V_S+ 1.9

−V_S+ 1.1

−V_S+ 1.2

−V_S+ 1.8

−V_S+ 1.1

−V_S+ 1.2

+V_S− 1.5

+V_S− 1.1

+V_S− 1.2

+V_S− 1.1

T_A= 210°C

T_A= 175°C

T_A= 210°C

T_A= 175°C

Rev. B | Page 4 of 24

1 2 3 456 7 8...25

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