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AD628ARZ

更新时间: 2024-02-01 13:31:01
品牌 Logo 应用领域
亚德诺 - ADI 放大器光电二极管
页数 文件大小 规格书
20页 457K
描述
High Common-Mode Voltage, Programmable Gain Difference Amplifier

AD628ARZ 数据手册

 浏览型号AD628ARZ的Datasheet PDF文件第4页浏览型号AD628ARZ的Datasheet PDF文件第5页浏览型号AD628ARZ的Datasheet PDF文件第6页浏览型号AD628ARZ的Datasheet PDF文件第8页浏览型号AD628ARZ的Datasheet PDF文件第9页浏览型号AD628ARZ的Datasheet PDF文件第10页 
AD628  
ABSOLUTE MAXIMUM RATINGS  
Table 3.  
Stresses greater than those listed under Absolute Maximum  
Parameter  
Rating  
Ratings may cause permanent damage to the device. This is a  
stress rating only; functional operation of the device at these or  
any other conditions above those indicated in the operational  
section of this specification is not implied. Exposure to absolute  
maximum rating conditions for extended periods may affect  
device reliability.  
Supply Voltage  
18 V  
Internal Power Dissipation  
Input Voltage (Common Mode)  
Differential Input Voltage  
Output Short-Circuit Duration  
Storage Temperature  
See Figure 3  
120 V1  
120 V1  
Indefinite  
−65°C to +125°C  
–40°C to +85°C  
300°C  
THERMAL CHARACTERISTICS  
Operating Temperature Range  
Lead Temperature (Soldering, 10 sec)  
1.6  
T
= 150°C  
J
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
1 When using 12 V supplies or higher (see the Input Voltage Range section).  
8-LEAD MSOP PACKAGE  
8-LEAD SOIC PACKAGE  
MSOP θ (JEDEC; 4-LAYER BOARD) = 132.54°C/W  
JA  
SOIC θ (JEDEC; 4-LAYER BOARD) = 154°C/W  
JA  
–60  
–40  
–20  
0
20  
40  
60  
80  
100  
AMBIENT TEMPERATURE (°C)  
Figure 3. Maximum Power Dissipation vs. Temperature  
ESD CAUTION  
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on  
the human body and test equipment and can discharge without detection. Although this product features  
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy  
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance  
degradation or loss of functionality.  
Rev. F | Page 7 of 20  
 
 
 
 

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