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AD548JRZ-REEL PDF预览

AD548JRZ-REEL

更新时间: 2024-02-20 02:01:05
品牌 Logo 应用领域
亚德诺 - ADI 运算放大器
页数 文件大小 规格书
8页 200K
描述
IC OP-AMP, 3000 uV OFFSET-MAX, 1 MHz BAND WIDTH, PDSO8, SOIC-8, Operational Amplifier

AD548JRZ-REEL 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:DIP
包装说明:HERMETIC SEALED, CERDIP-8针数:8
Reach Compliance Code:unknown风险等级:5.45
放大器类型:OPERATIONAL AMPLIFIER最大平均偏置电流 (IIB):0.00001 µA
标称共模抑制比:92 dB最大输入失调电压:500 µV
JESD-30 代码:R-GDIP-T8JESD-609代码:e0
湿度敏感等级:NOT SPECIFIED负供电电压上限:-18 V
标称负供电电压 (Vsup):-15 V功能数量:1
端子数量:8最高工作温度:125 °C
最低工作温度:-55 °C封装主体材料:CERAMIC, GLASS-SEALED
封装代码:DIP封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
座面最大高度:5.08 mm标称压摆率:1.8 V/us
子类别:Operational Amplifier供电电压上限:18 V
标称供电电压 (Vsup):15 V表面贴装:NO
技术:BIFET温度等级:MILITARY
端子面层:TIN LEAD端子形式:THROUGH-HOLE
端子节距:2.54 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED标称均一增益带宽:1000 kHz
宽度:7.62 mmBase Number Matches:1

AD548JRZ-REEL 数据手册

 浏览型号AD548JRZ-REEL的Datasheet PDF文件第2页浏览型号AD548JRZ-REEL的Datasheet PDF文件第3页浏览型号AD548JRZ-REEL的Datasheet PDF文件第4页浏览型号AD548JRZ-REEL的Datasheet PDF文件第6页浏览型号AD548JRZ-REEL的Datasheet PDF文件第7页浏览型号AD548JRZ-REEL的Datasheet PDF文件第8页 
Typical Characteristics–AD548  
Figure 19a. Unity Gain Follower  
Figure 19c. Unity Gain Follower  
Pulse Response (Sm all Signal)  
Figure 19b. Unity Gain Follower  
Pulse Response (Large Signal)  
Figure 20a. Utility Gain Inverter  
Figure 20b. Utility Gain Inverter  
Pulse Response (Large Signal)  
Figure 20c. Unity Gain Inverter  
Pulse Response (Sm all Signal)  
AP P LICATIO N NO TES  
Applying the AD548  
T he AD548 is a JFET -input op amp with a guaranteed maxi-  
mum IB of less than 10 pA, and offset and drift laser-trimmed to  
0.25 mV and 2 µV/°C respectively (AD548C). AC specs in-  
clude 1 MHz bandwidth, 1.8 V/µs typical slew rate and 8 µs set-  
tling time for a 20 V step to ±0.01%—all at a supply current less  
than 200 µA. T o capitalize on the device’s performance, a num-  
ber of error sources should be considered.  
T he minimal power drain and low offset drift of the AD548  
reduce self-heating or “warm-up” effects on input offset voltage,  
making the AD548 ideal for on/off battery powered applica-  
tions. T he power dissipation due to the AD548’s 200 µA supply  
current has a negligible effect on input current, but heavy out-  
put loading will raise the chip temperature. Since a JFET ’s in-  
put current doubles for every 10°C rise in chip temperature, this  
can be a noticeable effect.  
Figure 21. Offset Null Configuration  
LAYO UT  
T o take full advantage of the AD548’s 10 pA max input current,  
parasitic leakages must be kept below an acceptable level. T he  
practical limit of the resistance of epoxy or phenolic circuit  
board material is between 1 × 1012 and 3 × 1012 . T his can  
result in an additional leakage of 5 pA between an input of 0 V  
and a –15 V supply line. T eflon or a similar low leakage material  
(with a resistance exceeding 1017 ) should be used to isolate  
high impedance input lines from adjacent lines carrying high  
voltages. T he insulator should be kept clean, since contaminants  
will degrade the surface resistance.  
T he amplifier is designed to be functional with power supply  
voltages as low as ±4.5 V. It will exhibit a higher input offset  
voltage than at the rated supply voltage of ±15 V, due to power  
supply rejection effects. T he common-mode range of the  
AD548 extends from 3 V more positive than the negative supply  
to 1 V more negative than the positive supply. Designed to  
cleanly drive up to 10 kand 100 pF loads, the AD548 will  
drive a 2 kload with reduced open loop gain.  
O FFSET NULLING  
Unlike bipolar input amplifiers, zeroing the input offset voltage  
of a BiFET op amp will not minimize offset drift. Using balance  
Pins 1 and 5 to adjust the input offset voltage as shown in Fig-  
ure 21 will induce an added drift of 0.24 µV/°C per 100 µV of  
nulled offset. T he low initial offset (0.25 mV) of the AD548C  
results in only 0.6 µV/°C of additional drift.  
A metal guard completely surrounding the high impedance  
nodes and driven by a voltage near the common-mode input po-  
tential can also be used to reduce some parasitic leakages. T he  
guarding pattern in Figure 22 will reduce parasitic leakage due  
to finite board surface resistance; but it will not compensate for  
a low volume resistivity board.  
REV. C  
–5–  

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