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AD5235BRU250-RL7 PDF预览

AD5235BRU250-RL7

更新时间： 2024-02-27 09:07:22
品牌 Logo 应用领域
亚德诺 - ADI 光电二极管转换器电阻器
页数 文件大小 规格书
28页 767K
描述
IC DUAL 250K DIGITAL POTENTIOMETER, 3-WIRE SERIAL CONTROL INTERFACE, 1024 POSITIONS, PDSO16, MO-153AB, TSSOP-16, Digital Potentiometer

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AD5235BRU250-RL7 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Active零件包装代码：TSSOP
包装说明：TSSOP,针数：16
Reach Compliance Code：unknown风险等级：5.84
其他特性：LINEAR OR LOG TAPER SETTINGS; NONVOLATILE MEMORY; CAN ALSO OPERATE FROM +/-2.25V TO +/-2.75V SUPPLY标称带宽：0.125 kHz
控制接口：3-WIRE SERIAL转换器类型：DIGITAL POTENTIOMETER
JESD-30 代码：R-PDSO-G16JESD-609代码：e0
长度：5 mm湿度敏感等级：NOT APPLICABLE
功能数量：2位置数：1024
端子数量：16最高工作温度：85 °C
最低工作温度：-40 °C封装主体材料：PLASTIC/EPOXY
封装代码：TSSOP封装形状：RECTANGULAR
封装形式：SMALL OUTLINE, THIN PROFILE, SHRINK PITCH峰值回流温度（摄氏度）：220
认证状态：COMMERCIAL电阻定律：LOGARITHMIC
最大电阻容差：30%最大电阻器端电压：5 V
最小电阻器端电压：座面最大高度：1.2 mm
标称供电电压：5 V表面贴装：YES
标称温度系数：35 ppm/ °C温度等级：INDUSTRIAL
端子面层：TIN LEAD端子形式：GULL WING
端子节距：0.65 mm端子位置：DUAL
处于峰值回流温度下的最长时间：30标称总电阻：250000 Ω
宽度：4.4 mmBase Number Matches：1

AD5235BRU250-RL7 数据手册

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AD5235  
INTERFACE TIMING AND EEMEM RELIABILITY CHARACTERISTICS—25 kΩ, 250 kΩ VERSIONS  
Guaranteed by design and not subject to production test. See the Timing Diagrams section for the location of measured values. All input  
control voltages are specified with tR = tF = 2.5 ns (10% to 90% of 3 V) and timed from a voltage level of 1.5 V. Switching characteristics are  
measured using both VDD = 3 V and VDD = 5 V.  
Table 2.  
Parameter  
Symbol  
t1  
t2  
Conditions  
Min  
20  
10  
1
Typ1 Max  
Unit  
ns  
ns  
Clock Cycle Time (tCYC  
CS Setup Time  
)
CLK Shutdown Time to CS Rise  
Input Clock Pulse Width  
Data Setup Time  
t3  
tCYC  
ns  
ns  
t4, t5  
t6  
tꢀ  
Clock level high or low  
From positive CLK transition  
From positive CLK transition  
10  
5
5
Data Hold Time  
ns  
CS to SDO-SPI Line Acquire  
CS to SDO-SPI Line Release  
CLK to SDO Propagation Delay2  
CLK to SDO Data Hold Time  
CS High Pulse Width3  
t8  
40  
50  
50  
ns  
t9  
ns  
t10  
t11  
t12  
RP = 2.2 kΩ, CL < 20 pF  
RP = 2.2 kΩ, CL < 20 pF  
ns  
ns  
ns  
0
10  
4
CS High to CS High3  
t13  
tCYC  
ns  
RDY Rise to CS Fall  
t14  
0
CS Rise to RDY Fall Time  
Store/Read EEMEM Time4  
CS Rise to Clock Rise/Fall Setup  
Preset Pulse Width (Asynchronous)5  
Preset Response Time to Wiper Setting5  
Power-On EEMEM Restore Time5  
FLASH/EE MEMORY RELIABILITY  
Endurance6  
t15  
0.15 0.3  
30  
ms  
ms  
ns  
t16  
t1ꢀ  
Applies to instructions 0x2, 0x3, and 0x9  
PR pulsed low to refresh wiper positions  
10  
50  
tPRW  
tPRESP  
tEEMEM  
ns  
140  
140  
μs  
μs  
100  
kCycles  
Years  
Data Retentionꢀ  
100  
1 Typicals represent average readings at 25°C and VDD = 5 V.  
2 Propagation delay depends on the value of VDD, RPULL-UP, and CL.  
3 Valid for commands that do not activate the RDY pin.  
4
PR  
RDY pin low only for Instruction 2, Instruction 3, Instruction 8, Instruction 9, Instruction 10, and the hardware pulse: CMD_8 ~ 1 ms; CMD_9, CMD_10 ~ 0.1 ms;  
CMD_2, CMD_3 ~ 20 ms. Device operation at TA = −40°C and VDD < 3 V extends the save time to 35 ms.  
5 Not shown in Figure 2 and Figure 3.  
6 Endurance is qualified to 100,000 cycles per JEDEC Standard 22, Method A11ꢀ and measured at −40°C, +25°C, and +85°C; typical endurance at +25°C is ꢀ00,000 cycles.  
ꢀ Retention lifetime equivalent at junction temperature (TJ) = 55°C per JEDEC Standard 22, Method A11ꢀ. Retention lifetime based on an activation energy of 0.6 eV  
derates with junction temperature in the Flash/EE memory.  
Rev. C | Page 5 of 28  
 
 
 
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