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AD5200BRMZ10 PDF预览

AD5200BRMZ10

更新时间: 2024-02-18 02:14:55
品牌 Logo 应用领域
亚德诺 - ADI 电位器
页数 文件大小 规格书
15页 1043K
描述
256-Position and 33-Position Digital Potentiometers

AD5200BRMZ10 数据手册

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AD5200/AD5201–SPECIFICATIONS  
(VDD = 5 V 10%, or 3 V 10%, VSS = 0 V, VA = +VDD, VB = 0 V,  
–40C < T < +85C unless otherwise noted.)  
AD5200 ELECTRICAL CHARACTERISTICS  
A
Parameter  
Symbol  
Conditions  
Min Typ1 Max  
Unit  
DCCHARACTERISTICSRHEOSTATMODE  
2
ResistorDifferentialNonlinearity  
R-DNL  
R-INL  
RAB  
RWB, VA = No Connect  
RWB, VA = No Connect  
TA = 25°C  
–1  
–2  
–30  
0.25 +1  
0.5 +2  
LSB  
LSB  
%
2
ResistorIntegralNonlinearity  
3
NominalResistorTolerance  
+30  
ResistanceTemperatureCoefficient  
WiperResistance  
R
RW  
AB/T  
VAB = VDD, Wiper = No Connect  
VDD = 5 V  
500  
50  
ppm/°C  
100  
DCCHARACTERISTICSPOTENTIOMETERDIVIDERMODE(SpecificationsapplytoallVRs.)  
Resolution  
DifferentialNonlinearity  
IntegralNonlinearity  
N
DNL  
INL  
8
–1  
–2  
Bits  
LSB  
LSB  
4
1/4 +1  
1/2 +2  
4
VoltageDividerTemperatureCoefficient  
Full-ScaleError  
Zero-ScaleError  
VW/T  
VWFSE  
VWZSE  
Code = 80 H  
Code = FF H  
Code = 00 H  
5
ppm/°C  
LSB  
LSB  
–1.5 –0.5  
0
0
+0.5 +1.5  
RESISTORTERMINALS  
VoltageRange 5  
VA, B, W  
CA, B  
CW  
IDD_SD  
ICM  
VSS  
VDD  
V
Capacitance 6 A,B  
f = 1 MHz, Measured to GND, Code = 80  
f = 1 MHz, Measured to GND, Code = 80  
VDD = 5.5 V  
45  
60  
0.01  
1
pF  
pF  
µA  
nA  
H
H
Capacitance 6 W  
ShutdownSupplyCurrent  
Common-ModeLeakage  
7
5
VA = VB = VDD/2  
DIGITALINPUTSANDOUTPUTS  
InputLogicHigh  
InputLogicLow  
InputLogicHigh  
InputLogicLow  
VIH  
VIL  
VIH  
VIL  
IIL  
2.4  
2.1  
V
V
V
V
µA  
pF  
0.8  
VDD = 3 V, VSS = 0 V  
VDD = 3 V, VSS = 0 V  
VIN = 0 V or 5 V  
0.6  
1
InputCurrent  
InputCapacitance  
6
CIL  
5
POWERSUPPLIES  
LogicSupply  
VLOGIC  
VDD RANGE  
VDD/SS RANGE  
IDD  
ISS  
PDISS  
2.7  
–0.3  
2.3  
5.5  
5.5  
2.7  
40  
40  
0.2  
V
V
V
µA  
µA  
mW  
PowerSingle-SupplyRange  
PowerDual-SupplyRange  
PositiveSupplyCurrent  
NegativeSupplyCurrent  
PowerDissipation 8  
VSS = 0 V  
VIH = +5 V or VIL = 0 V  
VSS = –5 V  
VIH = +5 V or VIL = 0 V, VDD = +5 V, VSS = 0 V  
15  
15  
PowerSupplySensitivity  
PSS  
VDD = +5 V 10%, Code = Midscale  
–0.01 0.001 +0.01 %/%  
6,9  
DYNAMICCHARACTERISTICS  
Bandwidth3dB  
BW_10 kΩ  
BW_50 kΩ  
THDW  
tS  
RAB = 10 k, Code = 80 H  
RAB = 50 k, Code = 80 H  
VA = 1 V rms, VB = 0 V, f = 1 kHz, R AB = 10 kΩ  
VA = 5 V, VB = 0 V, 1 LSB Error Band  
RWB = 5 k, RS = 0  
600  
100  
0.003  
2/9  
kHz  
kHz  
%
µs  
nVHz  
TotalHarmonicDistortion  
VW Settling Time (10 k/50 k)  
Resistor Noise Voltage Density  
eN_WB  
9
NOTES  
1Typicals represent average readings at 25°C and VDD = 5 V, VSS = 0 V.  
2Resistor position nonlinearity error R-INL is the deviation from an ideal value measured between the maximum resistance and the minimum resistance wiper posi-  
tions. R-DNL measures the relative step change from ideal between successive tap positions. Parts are guaranteed monotonic. I W = VDD/R for both VDD = +2.7 V,  
VSS = –2.7 V.  
3VAB = VDD, Wiper (VW) = No connect.  
4INL and DNL are measured at VW with the RDAC configured as a potentiometer divider similar to a voltage output D/A converter. VA = VDD and VB = 0 V. DNL  
specification limits of 1 LSB maximum are Guaranteed Monotonic operating conditions.  
5Resistor Terminals A, B, W have no limitations on polarity with respect to each other.  
6Guaranteed by design and not subject to production test.  
7Measured at the A terminal. A terminal is open-circuited in shutdown mode.  
8PDISS is calculated from (IDD × VDD). CMOS logic level inputs result in minimum power dissipation.  
9All dynamic characteristics use VDD = 5 V, VSS = 0 V.  
Specifications subject to change without notice.  
REV. D  
–2–  

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