AD1674
TIMING—STAND -ALO NE MO D E (F igur es 4a and 4b)
J, K, A, B Grades
Typ
T Grade
Typ
P aram eter
Sym bol
Min
Max
Min
Max
Units
Data Access T ime
tDDR
tHRL
tDS
tHDR
tHS
150
150
ns
ns
ns
ns
µs
ns
Low R/C Pulse Width
ST S Delay from R/C
Data Valid After R/C Low
ST S Delay After Data Valid
High R/C Pulse Width
50
50
200
1.2
225
1.2
25
0.6
150
25
0.6
150
0.8
0.8
tHRH
NOT E
All min and max specifications are guaranteed.
Specifications subject to change without notice.
tHRL
_
R/C
_
R/C
tHRH
tDS
tDS
STS
STS
tC
tDDR
tHDR
tC
tHS
tHDR
HIGH-Z
HIGH-Z
DATA
VALID
DB11 – DB0
HIGH-Z
DATA
VALID
DB11 – DB0
DATA VALID
tHL
Figure 4a. Stand-Alone Mode Tim ing Low Pulse for R/C
Figure 4b. Stand-Alone Mode Tim ing High Pulse for R/C
. . . . . . . . . . . . . . . . . . . . . . . . . . . Momentary Short to VCC
Junction T emperature . . . . . . . . . . . . . . . . . . . . . . . . . +175°C
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 825 mW
Lead T emperature, Soldering (10 sec) . . . . . . . +300°C, 10 sec
Storage T emperature . . . . . . . . . . . . . . . . . . . –65°C to +150°C
ABSO LUTE MAXIMUM RATINGS*
VCC to Digital Common . . . . . . . . . . . . . . . . . . . 0 to + 16.5 V
VEE to Digital Common . . . . . . . . . . . . . . . . . . . . . 0 to –16.5 V
VLOGIC to Digital Common . . . . . . . . . . . . . . . . . . 0 V to +7 V
Analog Common to Digital Common . . . . . . . . . . . . . . . ±1 V
Digital Inputs to Digital Common . . . –0.5 V to VLOGIC +0.5 V
Analog Inputs to Analog Common . . . . . . . . . . . . VEE to VCC
20 VIN to Analog Common . . . . . . . . . . . . . . . . . VEE to +24 V
REF OUT . . . . . . . . . . . . . . . . . Indefinite Short to Common
*Stresses above those listed under “Absolute Maximum Ratings” may cause
permanent damage to the device. T his is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the
operational section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
CAUTIO N
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although
the AD1674 features proprietary ESD protection circuitry, permanent damage may occur on
devices subjected to high energy electrostatic discharges. T herefore, proper ESD precautions are
recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
O RD ERING GUID E
INL
(TMIN to TMAX
S/(N+D )
(TMIN to TMAX
P ackage
D escription
P ackage
O ption2
Model1
Tem perature Range
)
)
AD1674JN
AD1674KN
AD1674JR
AD1674KR
AD1674AR
AD1674BR
AD1674AD
AD1674BD
AD1674T D
0°C to +70°C
0°C to +70°C
0°C to +70°C
0°C to +70°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–55°C to +125°C
±1 LSB
±1/2 LSB
±1 LSB
±1/2 LSB
±1 LSB
±1/2 LSB
±1 LSB
69 dB
70 dB
69 dB
70 dB
69 dB
70 dB
69 dB
70 dB
70 dB
Plastic DIP
Plastic DIP
N-28
N-28
R-28
R-28
R-28
R-28
D-28
D-28
D-28
Plastic SOIC
Plastic SOIC
Plastic SOIC
Plastic SOIC
Ceramic DIP
Ceramic DIP
Ceramic DIP
±1/2 LSB
±1 LSB
NOT ES
1For details on grade and package offerings screened in accordance with MIL-ST D-883, refer to the Analog Devices Military Products Databook or current
AD1674/883B data sheet. SMD is also available.
2N = Plastic DIP; D = Hermetic Ceramic DIP; R = Plastic SOIC.
–6–
REV. C
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