Datasheet > 115739-HMC573LC3B

115739-HMC573LC3B

更新时间： 2022-09-29 19:18:02

品牌	Logo	应用领域
亚德诺 - ADI		/
页数	文件大小	规格书
6页	331K
描述
EVAL BOARD HMC573LC3B

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

115739-HMC573LC3B 数据手册

浏览型号115739-HMC573LC3B的Datasheet PDF文件第2页

浏览型号115739-HMC573LC3B的Datasheet PDF文件第3页

浏览型号115739-HMC573LC3B的Datasheet PDF文件第4页

HMC573LC3B

v03.0514

SMT GaAs MMIC x2 ACTIVE FREQUENCY

MULTIPLIER, 8 - 22 GHz OUTPUT

Typical Applications

Features

The HMC573LC3B is suitable for:

High Output Power: +12 dBm

• Clock Generation Applications:

Low Input Power Drive: 0 to +6 dBm

Fo Isolation: >20 dBc @ Fout= 16 GHz

100 KHz SSB Phase Noise: -134 dBc/Hz

Single Supply: +5V@ 92 mA

SONET OC-192 & SDH STM-64

• Point-to-Point & VSAT Radios

• Test Instrumentation

• Military & Space

RoHS Compliant 3x3 mm SMT Package

Functional Diagram

General Description

The HMC573LC3B is a x2 active broadband frequ-

ency multiplier utilizing GaAs PHEMT technology in a

leadless RoHS compliant SMT package. When driven

by a +5 dBm signal, the multiplier provides +12 dBm

typical output power from 8 to 22 GHz. The Fo and

3Fo isolations are >20 dBc and >25 dBc respectively

at 16 GHz. The HMC573LC3B is ideal for use in LO

multiplier chains for Pt-to-Pt & VSAT Radios yielding

reduced parts count vs. traditional approaches. The

low additive SSB Phase Noise of -134 dBc/Hz at

100 kHz offset helps maintain good system noise

performance. The RoHS packaged HMC573LC3B

eliminates the need for wire bonding, and allows the

use of surface mount manufacturing techniques.

Electrical Speciﬁcations, T_A= +25°C, Vdd = +5V, 5 dBm Drive Level

Parameter

Min.

Typ.

4 - 11

8 - 22

Max.

Units

GHz

dBm

dBc

Frequency Range, Input

Frequency Range, Output

Output Power

Fo Isolation (with respect to output level)

3Fo Isolation (with respect to output level)

4Fo Isolation (with respect to output level)

Input Return Loss

dBc

Output Return Loss

SSB Phase Noise (100 kHz Offset)

-134

dBc/Hz

Supply Current (Idd) (Vdd = 5V, Vgg = -1.25V Typ.)

*Adjust Vgg between -1.5 and ~1.1V to achieve Idd = 92 mA

Information furnished by Analog Devices is believed to be accurate and reliable. However, no

For price, delivery, and to place orders: Analog Devices, Inc.,

_resF_poo_nr_sibp_ilir_tyic_ise_a,_ssd_ume_el_div_be_{y A}ry_nala_ogn_Dd_evt_ico_esp_fola_{r it}c_se_useo_,r_nd_ore_for_rs_a:_nyH_ini_frt_it_ni_gt_ee_meM_ntsic_ofr_po_aw_tena_tsv_oe_{r o}C_theo_rrporation, 2 Elizabeth Drive, Chelmsford, MA 01824

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106

rights of third parties that may result from its use. Specifications subject to change without notice. No

Phone: 978-250-3343

Fax: 978-250-3373

Order On-line at www.hittite.com

Phone: 781-329-4700 • Order online at www.analog.com

license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

^{Trademarks and registered trademarks ar}A^{e t}p^hep^pl^ri^oc^pea^rtt^yio^ofn^theS^iru^resp^pp^eco^tivr^et:^owP^neh^rso^.ne: 978-250-3343 or apps@hittite.com

Application Support: Phone: 1-800-ANALOG-D

12 3 4 5 6

下载PDF

与115739-HMC573LC3B相关器件

型号	品牌	描述	获取价格	数据表
115-7500-FT20Q	RCD	Fixed Resistor, Wire Wound, 1W, 750ohm, 45V, 1% +/-Tol, 20ppm/Cel,	获取价格
11575-1050-FT20W	RCD	Fixed Resistor, Wire Wound, 1W, 105ohm, 45V, 1% +/-Tol, 20ppm/Cel,	获取价格
11575-1051-FB	RCD	Fixed Resistor, Wire Wound, 1W, 1050ohm, 45V, 1% +/-Tol,	获取价格
11575-1070-FBQ	RCD	Fixed Resistor, Wire Wound, 1W, 107ohm, 45V, 1% +/-Tol,	获取价格
11575-1152-FBQ	RCD	Fixed Resistor, Wire Wound, 1W, 11500ohm, 45V, 1% +/-Tol,	获取价格
11575-14R0-FT20	RCD	Fixed Resistor, Wire Wound, 1W, 14ohm, 45V, 1% +/-Tol, 20ppm/Cel,	获取价格

产品中心

服务支持

精选活动

关于我们

帮助中心

115739-HMC573LC3B

115739-HMC573LC3B 数据手册

与115739-HMC573LC3B相关器件

与115739-HMC573LC3B相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

115739-HMC573LC3B

115739-HMC573LC3B 数据手册

与115739-HMC573LC3B相关器件

与115739-HMC573LC3B相关文章

您还可以找

您在本页遇到什么问题？