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ACT108W-600E PDF预览

ACT108W-600E

更新时间: 2024-01-18 12:29:33
品牌 Logo 应用领域
恩智浦 - NXP 触发装置开关三端双向交流开关电源开关光电二极管
页数 文件大小 规格书
13页 371K
描述
AC Thyristor power switch

ACT108W-600E 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G4Reach Compliance Code:unknown
HTS代码:8541.30.00.80风险等级:5.39
Is Samacsys:N配置:SINGLE
JESD-30 代码:R-PDSO-G4JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:4最高工作温度:125 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
认证状态:Not Qualified最大均方根通态电流:0.8 A
参考标准:IEC-60134断态重复峰值电压:600 V
表面贴装:YES端子面层:TIN
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:30触发设备类型:TRIAC
Base Number Matches:1

ACT108W-600E 数据手册

 浏览型号ACT108W-600E的Datasheet PDF文件第4页浏览型号ACT108W-600E的Datasheet PDF文件第5页浏览型号ACT108W-600E的Datasheet PDF文件第6页浏览型号ACT108W-600E的Datasheet PDF文件第8页浏览型号ACT108W-600E的Datasheet PDF文件第9页浏览型号ACT108W-600E的Datasheet PDF文件第10页 
ACT108W-600E  
NXP Semiconductors  
AC Thyristor power switch  
003aac808  
2
10  
Z
th(j-sp)  
(K/W)  
10  
1
P
1  
10  
t
t
p
2  
10  
10  
5  
4  
3  
2  
1  
10  
10  
10  
10  
1
10  
t
p
(s)  
Fig 9. Transient thermal impedance from junction to solder point as a function of pulse width  
6. Characteristics  
Table 6.  
Symbol  
IGT  
Characteristics  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
gate trigger current  
VD = 12 V; IT = 100 mA; LD+ G-;  
Tj = 25 °C; see Figure 10  
1
-
10  
mA  
VD = 12 V; IT = 100 mA; LD- G-; Tj = 25 °C  
1
-
-
-
10  
30  
mA  
mA  
IL  
latching current  
VD = 12 V; IG = 12 mA; Tj = 25 °C;  
see Figure 11  
IH  
holding current  
VD = 12 V; Tj = 25 °C; see Figure 12  
IT = 1.1 A; see Figure 13  
-
9
-
-
-
-
-
-
25  
1.3  
-
mA  
V
VT  
VGT  
on-state voltage  
gate trigger voltage  
-
VD = 600 V; IT = 100 mA; Tj 125 °C  
VD = 600 V; IT = 100 mA; Tj = 25 °C  
VD = 600 V; Tj 125 °C  
0.15  
V
-
1
V
ID  
off-state current  
-
0.2  
2
mA  
µA  
V/µs  
VD = 600 V; Tj 25 °C  
-
dVD/dt  
rate of rise of off-state VDM = 402 V; Tj = 125 °C; gate open  
1000  
-
voltage  
circuit; see Figure 14  
dIcom/dt  
rate of change of  
commutating current  
VD = 400 V; Tj = 125 °C; IT(RMS) = 1 A;  
dVcom/dt = 15 V/µs; gate open circuit;  
see Figure 15 and 16  
0.3  
-
-
-
-
A/ms  
V
VCL  
clamping voltage  
ICL = 100 mA; tp = 1 ms; Tj 125 °C;  
650  
see Figure 17  
ACT108W-600E_3  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 03 — 21 October 2009  
7 of 13  

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