Datasheet > ACST6610-8GTR

ACST6610-8GTR

更新时间： 2022-12-21 11:49:00

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		开关
页数	文件大小	规格书
15页	182K
描述
Overvoltage protected AC switch

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数据手册

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ACST6610-8GTR 数据手册

ACST6

Characteristics

Figure 10. On-state characteristics

(maximum values)

Figure 11. Relative variation of critical rate of

decrease of main current (dI/dt)

versus junction temperature

(A)

(dl/dt) [T ] / (dl/dt) [T = 125 °C]

c j c j

100

T max:

= 0.90 V

= 80 mΩ

T = 125 °C

T = 25 °C

T (°C)

(V)

100

125

Figure 12. Relative variation of static dV/dt

immunity versus junction

Figure 13. Relative variation of leakage

current versus junction

temperature

temperature (gate open)

DRM RRM

[T ;V

/ V

] / I

[T = 125 °C; 800 V]

dV/dt [T ] / dV/dt [T = 125 °C]

DRM RRM DRM RRM

1.0E+00

1.0E-01

1.0E-02

= V = 536 V

= V

= 800V

RRM

DRM

Different blocking voltages

= V

= 600 V

RRM

DRM

= V

= 200 V

RRM

DRM

T (°C)

1.0E-03

100

125

100

125

Figure 14. Relative variation of clamping

Figure 15. Thermal resistance junction to

ambient versus copper surface

under tab

voltage (V ) versus junction

temperature (minimum values)

Rth(j-a)(°C/W)

V_CL[T ] / V_CL[T = 25 °C]

D²PAK

Printed circuit board FR4,

copper thickness = 35 µm

1.15

1.10

1.05

1.00

0.95

0.90

0.85

S_CU(cm²)

T (°C)

-50

-25

100

125

Doc ID 7297 Rev 9

5/15

1 2 3 456 7 8...15

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