Characteristics
ACST6
1
Characteristics
Table 2.
Symbol
Absolute ratings (limiting values)
Parameter
Value
Unit
TO-220FPAB
Tc = 92 °C
6
TO-220AB/
D²PAK / I²PAK
Tc = 106 °C
IT(RMS) On-state rms current (full sine wave)
A
D²PAK with
Tamb = 62 °C
1.5
1 cm2 copper
F = 60 Hz
F = 50 Hz
tp = 16.7 ms
tp = 20 ms
tp = 10 ms
47
45
13
A
A
Non repetitive surge peak on-state current
ITSM
Tj initial = 25 °C, ( full cycle sine wave)
I2t
I2t for fuse selection
A2s
Critical rate of rise on-state current
IG = 2 x IGT, (tr ≤ 100 ns)
Non repetitive line peak pulse voltage (1)
dI/dt
VPP
F = 120 Hz
Tj = 125 °C
100
A/µs
Tj = 25 °C
Tj = 125 °C
Tj = 125 °C
Tj = 125 °C
2
0.1
kV
W
W
A
PG(AV) Average gate power dissipation
PGM
Peak gate power dissipation (tp = 20 µs)
Peak gate current (tp = 20 µs)
10
IGM
1.6
Tstg
Storage temperature range
-40 to +150
-40 to +125
260
°C
°C
°C
V
Tj
Operating junction temperature range
Tl
Maximum lead solder temperature during 10 ms (at 3 mm from plastic case)
TO-220FPAB
VINS(RMS) Insulation rms voltage
1500
1. According to test described in IEC 61000-4-5 standard and Figure 19.
Table 3.
Symbol
Electrical characteristics
Test conditions
Quadrant
I - II - III
Tj
Value
Unit
(1)
IGT
VOUT = 12 V, RL = 33 Ω
VOUT = 12 V, RL = 33 Ω
VOUT = VDRM, RL = 3.3 kΩ
IOUT = 500 mA
25 °C
25 °C
125 °C
25 °C
25 °C
25 °C
125 °C
125 °C
25 °C
MAX.
MAX.
MIN.
MAX.
MAX.
MAX.
MIN.
MIN.
MIN.
10
1.0
0.2
25
mA
V
VGT
VGD
I - II - III
I - II - III
V
(2)
IH
mA
mA
mA
V/µs
A/ms
V
IL
IL
IG = 1.2 x IGT
I - III
II
30
IG = 1.2 x IGT
40
dV/dt(2) VOUT = 67 % VDRM, gate open
500
3.5
850
(2)
(dI/dt)c
VCL
(dV/dt)c = 15 V/µs
ICL = 0.1 mA, tp = 1 ms
1. Minimum IGT is guaranteed at 5% of IGT max
2. For both polarities of OUT pin referenced to COM pin
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Doc ID 7297 Rev 9