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ACS20K PDF预览

ACS20K

更新时间: 2024-02-03 20:49:30
品牌 Logo 应用领域
英特矽尔 - INTERSIL
页数 文件大小 规格书
8页 88K
描述
Radiation Hardened Dual 4-Input NAND Gate

ACS20K 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:DFP包装说明:DFP, FL14,.3
针数:14Reach Compliance Code:not_compliant
HTS代码:8542.39.00.01风险等级:5.05
系列:ACJESD-30 代码:R-CDFP-F14
JESD-609代码:e0负载电容(CL):50 pF
逻辑集成电路类型:NAND GATE功能数量:2
输入次数:4端子数量:14
最高工作温度:125 °C最低工作温度:-55 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装代码:DFP
封装等效代码:FL14,.3封装形状:RECTANGULAR
封装形式:FLATPACK峰值回流温度(摄氏度):NOT SPECIFIED
电源:5 VProp。Delay @ Nom-Sup:15 ns
传播延迟(tpd):15 ns认证状态:Not Qualified
施密特触发器:NO筛选级别:MIL-PRF-38535 Class V
座面最大高度:2.92 mm子类别:Gates
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:MILITARY
端子面层:Tin/Lead (Sn/Pb)端子形式:FLAT
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED总剂量:300k Rad(Si) V
宽度:6.285 mmBase Number Matches:1

ACS20K 数据手册

 浏览型号ACS20K的Datasheet PDF文件第2页浏览型号ACS20K的Datasheet PDF文件第3页浏览型号ACS20K的Datasheet PDF文件第4页浏览型号ACS20K的Datasheet PDF文件第5页浏览型号ACS20K的Datasheet PDF文件第6页浏览型号ACS20K的Datasheet PDF文件第7页 
ACS20MS  
Radiation Hardened  
Dual 4-Input NAND Gate  
April 1995  
Features  
Pinouts  
14 LEAD CERAMIC DUAL-IN-LINE  
MIL-STD-1835 DESIGNATOR, CDIP2-T14, LEAD FINISH C  
TOP VIEW  
• 1.25 Micron Radiation Hardened SOS CMOS  
• Total Dose 300K RAD (Si)  
• Single Event Upset (SEU) Immunity  
<1 x 10-10 Errors/Bit-Day (Typ)  
A1  
B1  
1
2
3
4
5
6
7
14 VCC  
13 D2  
12 C2  
11 NC  
10 B2  
• SEU LET Threshold >80 MEV-cm2/mg  
NC  
C1  
• Dose Rate Upset >1011 RAD (Si)/s, 20ns Pulse  
• Latch-Up Free Under Any Conditions  
D1  
• Military Temperature Range: -55oC to +125oC  
• Significant Power Reduction Compared to ALSTTL Logic  
• DC Operating Voltage Range: 4.5V to 5.5V  
Y1  
9
8
A2  
Y2  
GND  
• Input Logic Levels  
14 LEAD CERAMIC FLATPACK  
MIL-STD-1835 DESIGNATOR, CDFP3-F14, LEAD FINISH C  
TOP VIEW  
- VIL = 30% of VCC Max  
- VIH = 70% of VCC Min  
• Input Current 1µA at VOL, VOH  
1
2
3
4
5
6
7
14  
13  
12  
11  
10  
9
VCC  
D2  
A1  
B1  
Description  
C2  
NC  
C1  
The Intersil ACS20MS is a radiation hardened dual 4-input  
NAND gate. A low on any input forces the output to a high logic  
state.  
NC  
B2  
D1  
Y1  
A2  
The ACS20MS utilizes advanced CMOS/SOS technology to  
achieve high-speed operation. This device is a member of the  
radiation hardened, high-speed, CMOS/SOS Logic Family.  
Y2  
GND  
8
Ordering Information  
PART NUMBER  
ACS20DMSR  
TEMPERATURE RANGE  
SCREENING LEVEL  
Intersil Class S Equivalent  
Intersil Class S Equivalent  
Sample  
PACKAGE  
o
o
-55 C to +125 C  
14 Lead SBDIP  
o
o
ACS20KMSR  
-55 C to +125 C  
14 Lead Ceramic Flatpack  
14 Lead SBDIP  
o
ACS20D/Sample  
ACS20K/Sample  
ACS20HMSR  
+25 C  
o
+25 C  
Sample  
14 Lead Ceramic Flatpack  
Die  
o
+25 C  
Die  
Truth Table  
Functional Diagram  
(1, 9)  
An  
INPUTS  
OUTPUT  
An  
L
Bn  
Cn  
X
Dn  
Yn  
H
H
H
H
L
Bn  
(2, 10)  
X
L
X
X
X
L
(6, 8)  
Yn  
X
X
X
X
X
H
L
(4, 12)  
Cn  
X
X
H
H
H
Dn  
(5, 13)  
NOTE: L = Logic Level Low, H = Logic level High, X = Don’t Care  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
Spec Number 518815  
File Number 3616  
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999  
1

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