Electrical Specifications
Tc = +25°C, Zo = 50 Ω, Pin = -30 dBm, Vcc = 5V, Freq = 2 GHz, unless stated otherwise.
Symbol
Parameter and Test Condition
Units
Min.
Typ.
Max.
Std Dev.
Gp
Power Gain (|S21|2)
Power Gain Flatness,
Noise Figure
f = 200 MHz
f = 2.0 GHz
dB
23
23
21
25
0.2
∆Gp
f = 0.1 ~ 2.0 GHz
f = 0.1 ~ 3.4 GHz
dB
0.5
3.0
NF
f = 200 MHz
f = 2.0 GHz
dB
3.6
4.4
4.8
0.08
0.18
0.32
0.02
P1dB50Ω
OIP3
Output Power at 1dB Gain Compression f = 200 MHz
f = 2. 0 GHz
dBm
dBm
18.0
16.1
Output Third Order Intercept Point
f = 200 MHz
f = 2. 0 GHz
35.0
27.8
VSWRin
VSWRout
Input VSWR
f = 200 MHz
f = 2.0 GHz
1.20
1.11
Output VSWR
Device Current
f = 200 MHz
f = 2.0 GHz
1.20
1.14
0.02
0.2
Icc
mA
79
90
Notes:
Measurements taken on 50Ω test board shown on Figure 1. Excess circuit losses had been de-embedded from actual measurements. Standard deviation
and typical data based on at least 500 parts sample size from 2 wafer lots. Future wafers allocated to this product may have nominal values anywhere
within the upper and lower spec limits.
3