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A63P06361E-7.5 PDF预览

A63P06361E-7.5

更新时间: 2024-02-01 08:50:02
品牌 Logo 应用领域
联笙电子 - AMICC 计数器静态存储器
页数 文件大小 规格书
16页 280K
描述
1M X 36 Bit Synchronous High Speed SRAM with Burst Counter and Flow-through Data Output

A63P06361E-7.5 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:QFP, QFP100,.63X.87Reach Compliance Code:unknown
风险等级:5.84最长访问时间:7.5 ns
最大时钟频率 (fCLK):133 MHzI/O 类型:COMMON
JESD-30 代码:R-PQFP-G100内存密度:37748736 bit
内存集成电路类型:STANDARD SRAM内存宽度:36
端子数量:100字数:1048576 words
字数代码:1000000工作模式:SYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:1MX36输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:QFP
封装等效代码:QFP100,.63X.87封装形状:RECTANGULAR
封装形式:FLATPACK并行/串行:PARALLEL
电源:2.5 V认证状态:Not Qualified
最大待机电流:0.18 A最小待机电流:2.38 V
子类别:SRAMs最大压摆率:0.3 mA
标称供电电压 (Vsup):2.5 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子形式:GULL WING端子节距:0.635 mm
端子位置:QUADBase Number Matches:1

A63P06361E-7.5 数据手册

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A63P06361  
1M X 36 Bit Synchronous High Speed SRAM with  
Burst Counter and Flow-through Data Output  
Preliminary  
Features  
Fast access times: 6.5/7.5/8.0 ns(153/133/117 MHz)  
Single 2.5V±5% power supply  
Synchronous burst function  
Individual Byte Write control and Global Write  
Three separate chip enables allow wide range of  
options for CE control, address pipelining  
Selectable BURST mode  
SLEEP mode (ZZ pin) provided  
Available in 100-pin LQFP package  
Industrial operating temperature range: -45°C to  
+125°C for -I series  
General Description  
The A63P06361 is a high-speed SRAM containing 36M  
bits of bit synchronous memory, organized as 1024K  
words by 36 bits.  
The A63P06361 combines advanced synchronous  
peripheral circuitry, 2-bit burst control, input registers,  
output buffer and a 1M X 36 SRAM core to provide a wide  
range of data RAM applications.  
The positive edge triggered single clock input (CLK)  
controls all synchronous inputs passing through the  
registers. Synchronous inputs include all addresses (A0 -  
A19), all data inputs (I/O1 - I/O36 ), active LOW chip  
Burst operations can be initiated with either the address  
status processor ( ADSP ) or address status controller  
( ADSC ) input pin. Subsequent burst sequence burst  
addresses can be internally generated by the A63P06361  
and controlled by the burst advance ( ADV ) pin. Write  
cycles are internally self-timed and synchronous with the  
rising edge of the clock (CLK).  
This feature simplifies the write interface. Individual Byte  
enables allow individual bytes to be written. BW1 controls  
I/O1 - I/O9, BW2 controls I/O10 - I/O18, BW3 controls  
I/O19 - I/O27, and BW4 controls I/O28 - I/O36, all on the  
enable ( CE ), two additional chip enables (CE2, CE2 ),  
burst control inputs ( ADSC , ADSP , ADV ), byte write  
enables ( BWE , BW1, BW2 , BW3 , BW4 ) and Global  
Write ( GW ). Asynchronous inputs include output enable  
condition that BWE is LOW. GW LOW causes all bytes  
to be written.  
( OE ), clock (CLK), BURST mode (MODE) and SLEEP  
mode (ZZ).  
PRELIMINARY  
(August, 2005, Version 0.0)  
1
AMIC Technology, Corp.  

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