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A313CE0300FNC PDF预览

A313CE0300FNC

更新时间: 2022-12-01 22:46:31
品牌 Logo 应用领域
京瓷/艾维克斯 - KYOCERA AVX /
页数 文件大小 规格书
19页 358K
描述
CAP,CERAMIC,30PF,100VDC,1% -TOL,1% +TOL,NP0 TC CODE,-30,30PPM TC,1210 CASE

A313CE0300FNC 数据手册

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AVX European Space Agency and CECC  
Surface Mount Ceramic Capacitor Products  
DIELECTRIC TYPES USED  
Type I  
Type II  
X7R  
2C1  
NP0  
TPC Code: C  
TPC Code: Z  
TPC Code: G  
ELECTRICAL MEASUREMENT CONDITIONS FOR CECC CHIPS: T2 / T3 / T5 / T6  
Type  
1
2
TPC code  
Classification  
C
Z
2R1  
X7R  
IEC/CECC  
EIA  
1B  
C0G  
NP0  
CG  
DIN  
MIL  
Capacitance change  
With temperature & : Ubias = 0  
Ubias = UR  
30ppm/ꢀC  
15%  
N.A.  
Typical ageing (%/dec.)  
Reference temperature  
0
1.5  
22ꢀC 3ꢀC  
22ꢀC 3ꢀC  
Capacitance  
and D.F.  
Frequency  
C ≤ 1000 pF  
C > 1000 pF  
F = 1MHz  
F = 1 kHz  
C 100 pF  
F = 1MHz  
F = 1 kHz  
C > 100 pF  
measurement  
Voltage  
Um ≤ 5 Vrms  
Um ≤ 0.3 Vrms 0.2  
DF < 250 .10-4  
Dissipation  
Factor (DF)  
C 50 pF DF < 1.5 (150/C + 7).10-4  
C>50 pF DF < 15.10-4  
Insulation Resistance  
under UR /1 mn  
For C 10nF: Ri > 100 GΩ or  
For C ≤ 10nF: Ri > 100 GΩ or  
For C > 10nF: Ri x C > 1000s  
For C > 10nF: Ri x Cr > 1000s  
Proof voltage  
For UR ≤ 100V : 2.5 x UR  
For UR > 100V : 1.5 UR + 100V  
For UR ≤ 100V: 2.5 x UR  
For UR >100V: 1.5 x UR + 100V  
Note: ESA Chips are strictly measured vs ESA spec. 3009 + detail spec.  
ELECTRICAL MEASUREMENT CONDITIONS FOR ESA CHIPS: LEVEL B & C  
Type  
1
2
TPC code  
Classification  
C
Z
2R1  
X7R  
G
2C1  
IEC/CECC  
EIA  
1B  
C0G  
NP0  
CG  
DIN  
MIL  
BX  
Capacitance change  
With temperature & : Ubias = 0  
Ubias = UR  
30ppm/ꢀC  
20%  
*-60/+20%  
20%  
-30/+20%  
Typical ageing (%/dec.)  
Reference temperature  
0
1.5  
22ꢀC 3ꢀC  
1.5  
22ꢀC 3ꢀC  
22ꢀC 3ꢀC  
Capacitance  
and D.F.  
Frequency  
C ≤ 1000 pF  
C > 1000 pF  
F = 1MHz  
F = 1 kHz  
C 100 pF  
F = 1MHz  
F = 1 kHz  
C > 100 pF  
measurement  
Voltage  
Um ≤ 5 Vrms  
Um ≤ 1 Vrms  
DF < 250 .10-4  
Dissipation  
Factor (DF)  
C 50 pF DF < 1.5 (150/C + 7).10-4  
C>50 pF DF < 15.10-4  
Insulation Resistance  
under UR /1 mn  
Ri > 100 GΩ  
For C ≤ 10nF: Ri > 100 GΩ or  
For C > 10nF: Ri x C > 1000s  
Proof voltage  
For UR < 500V : 2.5 x UR  
For UR < 500V: 2.5 x UR  
For UR = 500V: 2 x UR  
*Typical value for this dielectric class  
Note: ESA Chips are strictly measured vs ESA spec. 3009 + detail spec.  
3

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