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A2C36S12M3 PDF预览

A2C36S12M3

更新时间: 2022-04-13 08:37:05
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意法半导体 - STMICROELECTRONICS /
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A2C36S12M3 数据手册

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A2C35S12M3  
Electrical ratings  
1.1.2  
Diode  
Limiting values at Tj= 25 °C, unless otherwise specified.  
Table 4: Absolute maximum ratings of the diode, inverter stage  
Parameter Value  
Symbol  
VRRM  
IF  
Unit  
V
Repetitive peak reverse voltage  
1200  
35  
Continuous forward current at (TC = 100 °C)  
Pulsed forward current  
A
(1)  
IFP  
70  
A
TJMAX  
TJop  
Maximum junction temperature  
175  
°C  
°C  
Operative temperature range under switching conditions  
-40 to 150  
Notes:  
(1)Pulse width limited by maximum junction temperature.  
Table 5: Electrical characteristics of the diode, inverter stage  
Symbol  
Parameter  
Test conditions  
Min. Typ. Max. Unit  
IF = 35 A  
-
-
2.95  
2.3  
4.1  
VF  
Forward voltage  
V
IF = 35 A, TJ = 150 ˚C  
Reverse recovery  
time  
trr  
Qrr  
-
-
-
-
-
-
-
-
-
200  
2.7  
43  
ns  
µC  
A
Reverse recovery  
charge  
IF = 35 A, VR = 600 V, VGE = ±15 V,  
diF/dt = 1460 A/μs  
Reverse recovery  
current  
Irrm  
Reverse recovery  
energy  
Erec  
trr  
1.1  
380  
6.8  
60  
mJ  
ns  
µC  
A
Reverse recovery  
time  
Reverse recovery  
charge  
Qrr  
IF = 35 A, VR = 600 V, VGE = ±15 V,  
diF/dt = 1424 A/μs, TJ = 150 °C  
Reverse recovery  
current  
Irrm  
Reverse recovery  
energy  
Erec  
RTHj-c  
3.2  
mJ  
Thermal resistance  
junction to case  
Each diode  
0.80 0.90 °C/W  
0.75 °C/W  
Each diode,  
Thermal resistance  
case to heatsink  
RTHc-h  
-
λgrease = 1 W/(m·°C)  
DocID028945 Rev 3  
5/19  
 

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