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A29L160AUG-70 PDF预览

A29L160AUG-70

更新时间： 2024-01-07 18:12:41
品牌 Logo 应用领域
联笙电子 - AMICC 闪存内存集成电路
页数 文件大小 规格书
42页 572K
描述
2M X 8 Bit / 1M X 16 Bit CMOS 3.3 Volt-only, Boot Sector Flash Memory

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A29L160AUG-70 技术参数

是否Rohs认证：符合生命周期：Contact Manufacturer
包装说明：TFBGA, BGA48,6X8,32Reach Compliance Code：unknown
风险等级：5.69Is Samacsys：N
最长访问时间：70 ns备用内存宽度：8
启动块：BOTTOM命令用户界面：YES
通用闪存接口：YES数据轮询：YES
JESD-30 代码：R-PBGA-B48长度：8 mm
内存密度：16777216 bit内存集成电路类型：FLASH
内存宽度：16功能数量：1
部门数/规模：1,2,1,31端子数量：48
字数：1048576 words字数代码：1000000
工作模式：ASYNCHRONOUS最高工作温度：85 °C
最低工作温度：-40 °C组织：1MX16
输出特性：OPEN-DRAIN封装主体材料：PLASTIC/EPOXY
封装代码：TFBGA封装等效代码：BGA48,6X8,32
封装形状：RECTANGULAR封装形式：GRID ARRAY, THIN PROFILE, FINE PITCH
并行/串行：PARALLEL电源：3.3 V
编程电压：3.3 V认证状态：Not Qualified
就绪/忙碌：YES座面最大高度：1.2 mm
部门规模：16K,8K,32K,64K最大待机电流：0.000005 A
子类别：Flash Memories最大压摆率：0.03 mA
最大供电电压 (Vsup)：3.6 V最小供电电压 (Vsup)：3 V
标称供电电压 (Vsup)：3.3 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子形式：BALL端子节距：0.8 mm
端子位置：BOTTOM切换位：YES
类型：NOR TYPE宽度：6 mm
Base Number Matches：1

A29L160AUG-70 数据手册

 浏览型号A29L160AUG-70的Datasheet PDF文件第1页浏览型号A29L160AUG-70的Datasheet PDF文件第2页浏览型号A29L160AUG-70的Datasheet PDF文件第4页浏览型号A29L160AUG-70的Datasheet PDF文件第5页浏览型号A29L160AUG-70的Datasheet PDF文件第6页浏览型号A29L160AUG-70的Datasheet PDF文件第7页 
A29L160A Series  
Device erasure occurs by executing the proper erase  
command sequence. This initiates the Embedded Erase  
The hardware sector protection feature disables operations  
for both program and erase in any combination of the  
sectors of memory. This can be achieved via programming  
equipment.  
The Erase Suspend/Erase Resume feature enables the user  
to put erase on hold for any period of time to read data from,  
or program data to, any other sector that is not selected for  
erasure. True background erase can thus be achieved.  
algorithm  
-
an internal algorithm that automatically  
preprograms the array (if it is not already programmed)  
before executing the erase operation. During erase, the  
device automatically times the erase pulse widths and  
verifies proper erase margin. The Unlock Bypass mode  
facilitates faster programming times by requiring only two  
write cycles to program data instead of four.  
The hardware  
pin terminates any operation in  
RESET  
progress and resets the internal state machine to reading  
array data. The pin may be tied to the system reset  
The host system can detect whether a program or erase  
operation is complete by observing the RY /  
pin, or by  
BY  
RESET  
reading the I/O7 (  
Polling) and I/O6 (toggle) status bits.  
Data  
circuitry. A system reset would thus also reset the device,  
enabling the system microprocessor to read the boot-up  
firmware from the Flash memory.  
The device offers two power-saving features. When  
addresses have been stable for a specified amount of time,  
the device enters the automatic sleep mode. The system can  
also place the device into the standby mode. Power  
consumption is greatly reduced in both these modes.  
After a program or erase cycle has been completed, the  
device is ready to read array data or accept another  
command.  
The sector erase architecture allows memory sectors to be  
erased and reprogrammed without affecting the data  
contents of other sectors. The A29L160A is fully erased  
when shipped from the factory.  
Pin Configurations  
ꢀSOP  
ꢀTSOP (I)  
1
RESET  
A18  
44  
43  
42  
WE  
A19  
A8  
2
3
4
A17  
A15  
A14  
A13  
A12  
A11  
A10  
A9  
A8  
A19  
NC  
WE  
RESET  
NC  
NC  
RY/BY  
A18  
A17  
A7  
A6  
A5  
A4  
A3  
A2  
A1  
1
2
3
4
5
6
7
8
48  
47  
46  
45  
44  
43  
42  
41  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
A16  
BYTE  
VSS  
I/O15(A-1)  
I/O7  
I/O14  
I/O6  
I/O13  
I/O5  
I/O12  
I/O4  
VCC  
I/O11  
I/O3  
I/O10  
I/O2  
I/O9  
I/O1  
I/O8  
A7  
A6  
A5  
A9  
41  
40  
39  
A10  
A11  
5
6
A4  
A3  
A2  
A1  
A0  
A12  
7
38  
8
A13  
A14  
A15  
37  
36  
35  
34  
9
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
9
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
A29L160AV  
A16  
CE  
33  
32  
31  
30  
29  
28  
27  
26  
25  
24  
BYTE  
VSS  
VSS  
OE  
I/O0  
I/O8  
I/O1  
I/O9  
I/O2  
I/O15(A-1)  
I/O7  
29  
28  
27  
26  
25  
I/O0  
OE  
VSS  
CE  
A0  
I/O14  
I/O6  
I/O13  
I/O5  
I/O12  
I/O4  
I/O10  
I/O3  
21  
22  
VCC  
I/O11  
23  
(May, 2005, Version 0.1)  
2
AMIC Technology, Corp.  
1234567...42

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A29L160AUG-70I AMICC 2M X 8 Bit / 1M X 16 Bit CMOS 3.3 Volt-only, Boot Sector Flash Memory

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A29L160AUG-70IF AMICC 2M X 8 Bit / 1M X 16 Bit CMOS 3.3 Volt-only, Boot Sector Flash Memory

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A29L160AUG-70U AMICC 2M X 8 Bit / 1M X 16 Bit CMOS 3.3 Volt-only, Boot Sector Flash Memory

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A29L160AUG-70UF AMICC 2M X 8 Bit / 1M X 16 Bit CMOS 3.3 Volt-only, Boot Sector Flash Memory

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