A29DL323 Series
32M-Bit CMOS Low Voltage Dual Operation Flash Memory
Preliminary 4M-Byte by 8-Bit (Byte Mode) / 2M-Word by 16-Bit (Word Mode)
Features
nSector group protection
nTwo bank organization enabling simultaneous execution of
erase / program and read
nBank organization: 2 banks (8 Mbits + 24 Mbits)
nMemory organization:
- 4,194,304 words x 8 bits (BYTE mode)
- 2,097,152 words x 16 bits (WORD mode)
nSector organization:
- Any sector group can be protected
- Any protected sector group can be temporary
unprotected
nSectors can be used for boot application
nHardware reset and standby using
nAutomatic sleep mode
pin
RESET
71 sectors (8 Kbytes / 4 Kwords × 8 sectors, 64 Kbytes /
32 Kwords × 63 sectors)
n2 types of sector organization
- T type: Boot sector allocated to the highest address
(sector)
- B type: Boot sector allocated to the lowest address
(sector)
n3-state output
nBoot block sector protect by
nConforms to common flash memory interface (CFI)
nExtra One Time Protect Sector provided
(ACC) pin
WP
Part No.
Access Operating Power supply current Standby
time
supply
(Active mode)
(Max.)
current
(Max.)
5 A
(Max.)
voltage
A29DL323 90ns
2.7V~
3.6V
16mA
30mA
nAutomatic program
- Program suspend / resume
nUnlock bypass program
nAutomatic erase
nOperating ambient temperature: -40 to 85°C
nProgram / erase time
- Program: 9.0 µs / byte (TYP.)
11.0 µs / word (TYP.)
- Sector erase: 0.7 s (TYP.)
- Chip erase
- Sector erase (sectors can be combined freely)
nErase suspend / resume
nProgram / Erase completion detection
- Detection through data polling and toggle bits
nNumber of program / erase: 1,000,000 times (MIN.)
nPackage options
- 48-pin TSOP (I) or 63-ball TFBGA
- Detection through RY/
pin
BY
General Description
The A29DL323 is a flash memory organized of 33,554,432
bits and 71 sectors. Sectors of this memory can be erased
at a low voltage (2.7 to 3.6 V) supplied from a single power
source, or the contents of the entire chip can be erased.
Two modes of memory organization, BYTE mode
(4,194,304 words × 8 bits) and WORD mode (2,097,152
words × 16 bits), are selectable so that the memory can be
programmed in byte or word units.
The A29DL323 can be read while its contents are being
erased or programmed. The memory cell is divided into two
banks. While sectors in one bank are being erased or
programmed, data can be read from the other bank thanks
to the simultaneous execution architecture. The banks are
8 Mbits and 24 Mbits.
Because the A29DL323 enables the boot sector to be
erased, it is ideal for storing a boot program. In addition,
program code that controls the flash memory can be also
stored, and the program code can be programmed or
erased without the need to load it into RAM. Eight small
sectors for storing parameters are provided, each of which
can be erased in 8 Kbytes units.
Once a program or erase command sequence has been
executed, an automatic program or automatic erase
function internally executes program or erase and
verification automatically.
Because the A29DL323 can be electrically erased or
programmed by writing an instruction, data can be
reprogrammed on-board after the flash memory has been
installed in a system, making it suitable for a wide range of
applications.
This flash memory comes in two types. The T type has a
boot sector located at the highest address (sector) and the
B type has a boot sector at the lowest address (sector).
PRELIMINARY
(May, 2002, Version 0.0)
1
AMIC Technology, Inc.
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