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A29DL162UG-120

更新时间： 2024-01-04 17:23:35
品牌 Logo 应用领域
联笙电子 - AMICC 闪存
页数 文件大小 规格书
47页 738K
描述
16 Megabit (2M x 8-Bit/1M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory

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A29DL162UG-120 技术参数

是否Rohs认证： 不符合生命周期：Contact Manufacturer
包装说明：FBGA, BGA48,6X8,32Reach Compliance Code：unknown
风险等级：5.88最长访问时间：120 ns
备用内存宽度：8启动块：BOTTOM
命令用户界面：YES通用闪存接口：YES
数据轮询：YESJESD-30 代码：R-PBGA-B48
内存密度：16777216 bit内存集成电路类型：FLASH
内存宽度：16部门数/规模：8,31
端子数量：48字数：1048576 words
字数代码：1000000最高工作温度：70 °C
最低工作温度：组织：1MX16
封装主体材料：PLASTIC/EPOXY封装代码：FBGA
封装等效代码：BGA48,6X8,32封装形状：RECTANGULAR
封装形式：GRID ARRAY, FINE PITCH并行/串行：PARALLEL
电源：3/3.3 V认证状态：Not Qualified
就绪/忙碌：YES部门规模：8K,64K
最大待机电流：0.000005 A子类别：Flash Memories
最大压摆率：0.045 mA表面贴装：YES
技术：CMOS温度等级：COMMERCIAL
端子形式：BALL端子节距：0.8 mm
端子位置：BOTTOM切换位：YES
类型：NOR TYPEBase Number Matches：1

A29DL162UG-120 数据手册

 浏览型号A29DL162UG-120的Datasheet PDF文件第40页浏览型号A29DL162UG-120的Datasheet PDF文件第41页浏览型号A29DL162UG-120的Datasheet PDF文件第42页浏览型号A29DL162UG-120的Datasheet PDF文件第44页浏览型号A29DL162UG-120的Datasheet PDF文件第45页浏览型号A29DL162UG-120的Datasheet PDF文件第46页 
A29DL16x Series  
ERASE AND PROGRAMMING PERFORMANCE  
Parameter  
Sector Erase Time  
Typ. (Note 1)  
Max. (Note 2)  
Unit  
sec  
sec  
µs  
Comments  
0.7  
27  
5
15  
Excludes 00h programming  
prior to erasure (Note 4)  
Chip Erase Time  
Byte Programming Time  
150  
210  
120  
27  
Word Programming Time  
Accelerated Word/Byte Programming Time  
7
µs  
Excludes system-level  
overhead (Note 5)  
4
µs  
Chip Programming Time  
(Note 3)  
Byte Mode  
Word Mode  
9
sec  
sec  
6
18  
Notes:  
1. Typical program and erase times assume the following conditions: 25°C, 3.0V VCC, 10,000 cycles. Additionally, programming  
typically assumes checkerboard pattern.  
2. Under worst case conditions of 90°C, VCC = 2.7V, 100,000 cycles.  
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes  
program faster than the maximum byte program time listed.  
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.  
5. System-level overhead is the time required to execute the four-bus-cycle command sequence for programming. See Table 12  
for further information on command definitions.  
6. The device has a minimum erase and program cycle endurance of 10,000 cycles.  
LATCH-UP CHARACTERISTICS  
Description  
Min.  
-1.0V  
Max.  
VCC+1.0V  
+100 mA  
12.5V  
Input Voltage with respect to VSS on all I/O pins  
VCC Current  
-100 mA  
-1.0V  
Input voltage with respect to VSS on all pins except I/O pins  
(including A9,  
and  
)
RESET  
OE  
Includes all pins except VCC. Test conditions: VCC = 3.0V, one pin at time.  
PACKAGE AND PIN CAPACITANCE  
Parameter Symbol  
Parameter Description  
Test Setup  
Typ.  
Max.  
Unit  
TSOP  
BGA  
6
7.5  
5
pF  
pF  
pF  
pF  
pF  
pF  
CIN  
Input Capacitance  
VIN=0  
4.2  
8.5  
5.4  
7.5  
3.9  
TSOP  
BGA  
12  
6.5  
9
COUT  
Output Capacitance  
VOUT=0  
VIN=0  
TSOP  
BGA  
CIN2  
Control Pin Capacitance  
4.7  
Notes:  
1. Sampled, not 100% tested.  
2. Test conditions TA = 25°C, f = 1.0MHz  
DATA RETENTION  
Parameter  
Test Conditions  
150°C  
Min  
Unit  
Years  
Years  
10  
20  
Minimum Pattern Data Retention Time  
125°C  
PRELIMINARY (September, 2004, Version 0.0)  
42  
AMIC Technology, Corp.  
1...4041424344454647

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