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A29400UM-90 PDF预览

A29400UM-90

更新时间: 2024-02-15 20:39:58
品牌 Logo 应用领域
联笙电子 - AMICC 闪存
页数 文件大小 规格书
33页 499K
描述
512K X 8 Bit / 256K X 16 Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory

A29400UM-90 数据手册

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A29400 Series  
Word/Byte Configuration  
The  
Program and Erase Operation Status  
During an erase or program operation, the system may  
check the status of the operation by reading the status bits  
on I/O7 - I/O0. Standard read cycle timings and ICC read  
specifications apply. Refer to "Write Operation Status" for  
more information, and to each AC Characteristics section  
for timing diagrams.  
pin determines whether the I/O pins I/O15-I/O0  
BYTE  
operate in the byte or word configuration. If the  
pin  
BYTE  
is set at logic ”1”, the device is in word configuration, I/O15-  
I/O0 are active and controlled by and  
.
OE  
CE  
If the  
pin is set at logic “0”, the device is in byte  
BYTE  
configuration, and only I/O0-I/O7 are active and controlled  
by and . I/O8-I/O14 are tri-stated, and I/O15 pin is  
Standby Mode  
CE  
OE  
When the system is not reading or writing to the device, it  
can place the device in the standby mode. In this mode,  
current consumption is greatly reduced, and the outputs  
are placed in the high impedance state, independent of the  
used as an input for the LSB(A-1) address function.  
Requirements for Reading Array Data  
To read array data from the outputs, the system must drive  
input.  
OE  
the  
and  
pins to VIL.  
is the power control and  
CE  
OE  
CE  
The device enters the CMOS standby mode when the  
CE  
pins are both held at VCC ± 0.5V. (Note that this  
selects the device.  
is the output control and gates  
OE  
array data to the output pins.  
&
RESET  
is a more restricted voltage range than VIH.) The device  
enters the TTL standby mode when is held at VIH,  
should remain at VIH all  
WE  
the time during read operation. The internal state machine  
is set for reading array data upon device power-up, or after  
a hardware reset. This ensures that no spurious alteration  
of the memory content occurs during the power transition.  
No command is necessary in this mode to obtain array  
data. Standard microprocessor read cycles that assert  
valid addresses on the device address inputs produce valid  
data on the device data outputs. The device remains  
enabled for read access until the command register  
contents are altered.  
See "Reading Array Data" for more information. Refer to  
the AC Read Operations table for timing specifications and  
to the Read Operations Timings diagram for the timing  
waveforms, lCC1 in the DC Characteristics table represents  
the active current specification for reading array data.  
CE  
is held at VCC±0.5V. The device requires the  
while  
RESET  
standard access time (tCE) before it is ready to read data.  
If the device is deselected during erasure or programming,  
the device draws active current until the operation is  
completed.  
ICC3 in the DC Characteristics tables represents the standby  
current specification.  
Output Disable Mode  
When the  
input is at VIH, output from the device is  
OE  
disabled. The output pins are placed in the high impedance  
state.  
: Hardware Reset Pin  
RESET  
The  
Writing Commands/Command Sequences  
pin provides a hardware method of resetting  
RESET  
the device to reading array data. When the system drives  
the pin low for at least a period of tRP, the device  
To write a command or command sequence (which  
includes programming data to the device and erasing  
RESET  
sectors of memory), the system must drive  
and  
CE  
WE  
immediately terminates any operation in progress, tristates  
all data output pins, and ignores all read/write attempts for  
to VIL, and  
to VIH. An erase operation can erase one  
OE  
sector, multiple sectors, or the entire device. The Sector  
Address Tables indicate the address range that each sector  
occupies. A "sector address" consists of the address inputs  
required to uniquely select a sector. See the "Command  
Definitions" section for details on erasing a sector or the  
entire chip, or suspending/resuming the erase operation.  
After the system writes the autoselect command sequence,  
the device enters the autoselect mode. The system can  
then read autoselect codes from the internal register (which  
is separate from the memory array) on I/O7 - I/O0. Standard  
read cycle timings apply in this mode. Refer to the  
"Autoselect Mode" and "Autoselect Command Sequence"  
sections for more information.  
the duration of the  
pulse. The device also resets  
RESET  
the internal state machine to reading array data. The  
operation that was interrupted should be reinitiated once  
the device is ready to accept another command sequence,  
to ensure data integrity.  
The  
pin may be tied to the system reset circuitry.  
RESET  
A system reset would thus also reset the Flash memory,  
enabling the system to read the boot-up firmware from the  
Flash memory.  
Refer to the AC Characteristics tables for  
parameters and diagram.  
RESET  
ICC2 in the DC Characteristics table represents the active  
current specification for the write mode. The "AC  
Characteristics" section contains timing specification tables  
and timing diagrams for write operations.  
PRELIMINARY  
(February, 2001, Version 0.1)  
5
AMIC Technology, Inc.  

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