5秒后页面跳转
A29040BL-55F/Q PDF预览

A29040BL-55F/Q

更新时间: 2024-01-06 03:58:13
品牌 Logo 应用领域
联笙电子 - AMICC /
页数 文件大小 规格书
29页 388K
描述
Flash,

A29040BL-55F/Q 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
包装说明:QCCJ,Reach Compliance Code:unknown
风险等级:5.71最长访问时间:55 ns
JESD-30 代码:R-PQCC-J32长度:13.97 mm
内存密度:4194304 bit内存集成电路类型:FLASH
内存宽度:8功能数量:1
端子数量:32字数:524288 words
字数代码:512000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:512KX8封装主体材料:PLASTIC/EPOXY
封装代码:QCCJ封装形状:RECTANGULAR
封装形式:CHIP CARRIER并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED编程电压:5 V
座面最大高度:3.4 mm最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:J BEND
端子节距:1.27 mm端子位置:QUAD
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:11.43 mm
Base Number Matches:1

A29040BL-55F/Q 数据手册

 浏览型号A29040BL-55F/Q的Datasheet PDF文件第3页浏览型号A29040BL-55F/Q的Datasheet PDF文件第4页浏览型号A29040BL-55F/Q的Datasheet PDF文件第5页浏览型号A29040BL-55F/Q的Datasheet PDF文件第7页浏览型号A29040BL-55F/Q的Datasheet PDF文件第8页浏览型号A29040BL-55F/Q的Datasheet PDF文件第9页 
A29040B Series  
"Autoselect Mode" and "Autoselect Command Sequence"  
sections for more information.  
ICC2 in the Characteristics table represents the active current  
specification for the write mode. The "AC Characteristics"  
section contains timing specification tables and timing  
diagrams for write operations.  
Requirements for Reading Array Data  
To read array data from the outputs, the system must drive  
the  
and  
pins to VIL.  
is the power control and  
CE  
OE  
CE  
selects the device.  
OE  
data to the output pins.  
is the output control and gates array  
should remain at VIH all the time  
WE  
during read operation. The internal state machine is set for  
reading array data upon device power-up, or after a  
hardware reset. This ensures that no spurious alteration of  
the memory content occurs during the power transition. No  
command is necessary in this mode to obtain array data.  
Standard microprocessor read cycles that assert valid  
addresses on the device address inputs produce valid data  
on the device data outputs. The device remains enabled for  
read access until the command register contents are altered.  
See "Reading Array Data" for more information. Refer to the  
AC Read Operations table for timing specifications and to the  
Read Operations Timings diagram for the timing waveforms,  
lCC1 in the DC Characteristics table represents the active  
current specification for reading array data.  
Program and Erase Operation Status  
During an erase or program operation, the system may  
check the status of the operation by reading the status bits  
on I/O7 - I/O0. Standard read cycle timings and ICC read  
specifications apply. Refer to "Write Operation Status" for  
more information, and to each AC Characteristics section for  
timing diagrams.  
Standby Mode  
When the system is not reading or writing to the device, it  
can place the device in the standby mode. In this mode,  
current consumption is greatly reduced, and the outputs are  
placed in the high impedance state, independent of the  
input.  
OE  
Writing Commands/Command Sequences  
The device enters the CMOS standby mode when the  
pin is held at VCC ± 0.5V. (Note that this is a more restricted  
voltage range than VIH.) The device enters the TTL standby  
CE  
To write a command or command sequence (which includes  
programming data to the device and erasing sectors of  
memory), the system must drive  
and  
to VIL, and  
CE  
WE  
mode when  
is held at VIH. The device requires the  
CE  
to VIH. An erase operation can erase one sector,  
OE  
standard access time (tCE) before it is ready to read data.  
If the device is deselected during erasure or programming,  
the device draws active current until the operation is  
completed.  
ICC3 in the DC Characteristics tables represents the standby  
current specification.  
multiple sectors, or the entire device. The Sector Address  
Tables indicate the address range that each sector occupies.  
A "sector address" consists of the address inputs required to  
uniquely select a sector. See the "Command Definitions"  
section for details on erasing a sector or the entire chip, or  
suspending/resuming the erase operation.  
After the system writes the autoselect command sequence,  
the device enters the autoselect mode. The system can then  
read autoselect codes from the internal register (which is  
separate from the memory array) on I/O7 - I/O0. Standard  
read cycle timings apply in this mode. Refer to the  
Output Disable Mode  
When the  
input is at VIH, output from the device is  
OE  
disabled. The output pins are placed in the high impedance  
state.  
Table 2. Sector Addresses Table  
Sector  
SA0  
SA1  
SA2  
SA3  
SA4  
SA5  
SA6  
SA7  
A18  
0
A17  
A16  
Address Range  
00000h - 0FFFFh  
10000h - 1FFFFh  
20000h - 2FFFFh  
30000h - 3FFFFh  
40000h - 4FFFFh  
50000h - 5FFFFh  
60000h - 6FFFFh  
70000h - 7FFFFh  
0
0
0
0
1
1
0
0
1
1
1
0
1
0
1
0
1
0
0
1
1
1
1
Note: All sectors are 64 Kbytes in size.  
PRELIMINARY  
(December, 2004, Version 0.2)  
5
AMIC Technology, Corp.  

与A29040BL-55F/Q相关器件

型号 品牌 描述 获取价格 数据表
A29040BL-55U AMICC 512K X 8 Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory

获取价格

A29040BL-55UF AMICC 512K X 8 Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory

获取价格

A29040BL-70 AMICC 512K X 8 Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory

获取价格

A29040BL-70F AMICC 512K X 8 Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory

获取价格

A29040BL-70U AMICC 512K X 8 Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory

获取价格

A29040BL-70UF AMICC 512K X 8 Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory

获取价格