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A1010B-VQG80C PDF预览

A1010B-VQG80C

更新时间: 2024-01-23 21:35:56
品牌 Logo 应用领域
ACTEL 时钟可编程逻辑
页数 文件大小 规格书
24页 163K
描述
Field Programmable Gate Array, 295 CLBs, 1200 Gates, 45MHz, 295-Cell, CMOS, PQFP80, MO-136, VQFP-80

A1010B-VQG80C 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:MO-136, VQFP-80Reach Compliance Code:compliant
风险等级:5.78其他特性:MAX 57 I/OS
最大时钟频率:45 MHzCLB-Max的组合延迟:4.5 ns
JESD-30 代码:S-PQFP-G80JESD-609代码:e3
长度:14 mm湿度敏感等级:3
可配置逻辑块数量:295等效关口数量:1200
输入次数:57逻辑单元数量:295
输出次数:57端子数量:80
最高工作温度:70 °C最低工作温度:
组织:295 CLBS, 1200 GATES封装主体材料:PLASTIC/EPOXY
封装代码:TQFP封装等效代码:TQFP80,.6SQ
封装形状:SQUARE封装形式:FLATPACK, THIN PROFILE
峰值回流温度(摄氏度):260电源:5 V
可编程逻辑类型:FIELD PROGRAMMABLE GATE ARRAY认证状态:Not Qualified
座面最大高度:1.2 mm子类别:Field Programmable Gate Arrays
最大供电电压:5.25 V最小供电电压:4.75 V
标称供电电压:5 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:MATTE TIN端子形式:GULL WING
端子节距:0.65 mm端子位置:QUAD
处于峰值回流温度下的最长时间:40宽度:14 mm
Base Number Matches:1

A1010B-VQG80C 数据手册

 浏览型号A1010B-VQG80C的Datasheet PDF文件第1页浏览型号A1010B-VQG80C的Datasheet PDF文件第2页浏览型号A1010B-VQG80C的Datasheet PDF文件第4页浏览型号A1010B-VQG80C的Datasheet PDF文件第5页浏览型号A1010B-VQG80C的Datasheet PDF文件第6页浏览型号A1010B-VQG80C的Datasheet PDF文件第7页 
A C T  
1 S e r i e s F P G A s  
A C T 1 A r r a y P e r f o r m a n c e  
source 10 mA at TTL levels. See Electrical Specifications for  
additional I/O buffer specifications.  
T e m p e r a t u r e a n d Vo lt a g e E ffe c t s  
Worst-case delays for ACT 1 arrays are calculated in the same  
manner as for masked array products. A typical delay  
parameter is multiplied by a derating factor to account for  
temperature, voltage, and processing effects. However, in an  
ACT 1 array, temperature and voltage effects are less  
dramatic than with masked devices. The electrical  
characteristics of module interconnections on ACT 1 devices  
remain constant over voltage and temperature fluctuations.  
D e v i c e O r g a n i z a t i o n  
ACT 1 devices consist of a matrix of logic modules arranged in  
rows separated by wiring channels. This array is surrounded  
by a ring of peripheral circuits including I/O buffers,  
testability circuits, and diagnostic probe circuits providing  
real-time diagnostic capability. Between rows of logic  
modules are routing channels containing sets of segmented  
metal tracks with PLICE antifuses. Each channel has 22  
signal tracks. Vertical routing is permitted via 13 vertical  
tracks per logic module column. The resulting network allows  
arbitrary and flexible interconnections between logic  
modules and I/O modules.  
As a result, the total derating factor from typical to  
worst-case for a standard speed ACT 1 array is only 1.19 to 1,  
compared to 2 to 1 for a masked gate array.  
Lo g ic Mo d u le S iz e  
Logic module size also affects performance. A mask  
programmed gate array cell with four transistors usually  
implements only one logic level. In the more complex logic  
module (similar to the complexity of a gate array macro) of  
an ACT 1 array, implementation of multiple logic levels  
within a single module is possible. This eliminates interlevel  
wiring and associated RC delays. The effect is termed “net  
compression.”  
P r o b e P i n  
ACT 1 devices have two independent diagnostic probe pins.  
These pins allow the user to observe any two internal signals  
by entering the appropriate net name in the diagnostic  
software. Signals may be viewed on a logic analyzer using  
Actels Actionprobe® diagnostic tools. The probe pins can  
also be used as user-defined I/Os when debugging is finished.  
O r d e r i n g I n f o r m a t i o n  
A1010  
B
2
PL  
84  
C
Application (Temperature Range)  
C = Commercial (0 to +70°C)  
I
= Industrial (–40 to +85°C)  
M = Military (–55 to +125°C)  
B = MIL-STD-883  
Package Lead Count  
Package Type  
PL = Plastic J-Leaded Chip Carriers  
PQ = Plastic Quad Flatpacks  
CQ = Ceramic Quad Flatpack  
PG = Ceramic Pin Grid Array  
VQ = Very Thin Quad Flatpack  
Speed Grade  
Blank = Standard Speed  
–1  
–2  
–3  
= Approximately 15% faster than Standard  
= Approximately 25% faster than Standard  
= Approximately 35% faster than Standard  
Die Revision  
B = 1.0 micron CMOS Process  
Part Number  
A1010 = 1200 Gates (5 V)  
A1020 = 2000 Gates (5 V)  
A10V10 = 1200 Gates (3.3 V)  
A10V20 = 2000 Gates (3.3 V)  
1 -2 8 5  

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