SOT223 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
BCP56
ISSUE 3 AUGUST 1995
✪
FEATURES
*
*
Suitable for AF drivers and output stages
High collector current and Low VCE(sat)
C
COMPLEMENTARY TYPE BCP53
E
C
PARTMARKING DETAILS BCP56
BCP56 10
B
BCP56 16
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
Collector-Base Voltage
100
80
5
V
V
Collector-Emitter Voltage
Emitter-Base Voltage
V
Peak Pulse Current
1.5
1
A
Continuous Collector Current
Power Dissipation at Tamb=25°C
IC
A
Ptot
2
W
°C
Operating and Storage Temperature
Range
Tj:Tstg
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER
SYMBOL MIN.
V(BR)CBO 100
TYP.
MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
V
V
IC=100µA
IC= 10mA *
IE=10µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO
V(BR)EBO
ICBO
80
5
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
100
20
nA
µA
VCB=30V
VCB=30V, Tamb=150°C
Emitter Cut-Off Current IEBO
10
VEB=5V
µA
Collector-Emitter
Saturation Voltage
VCE(sat)
0.5
V
IC=500mA, IB=50mA*
Base-Emitter Turn-On VBE(on)
Voltage
1.0
V
IC=500mA, VCE=2V*
Static Forward Current hFE
Transfer Ratio
40
25
250
IC=150mA, VCE=2V*
IC=500mA, VCE=2V*
IC=150mA, VCE=2V*
IC=150mA, VCE=2V*
BCP56-10 63
BCP56-16 100
100
160
160
250
Transition Frequency
fT
125
MHz
IC=50mA, VCE=10V,
f=100MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
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