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555

更新时间： 2024-02-01 03:57:27

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2页	62K
描述
SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR

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555 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	unknown
风险等级：	5.57	Is Samacsys：	N
Base Number Matches：	1

555 数据手册

SOT23 PNP SILICON PLANAR

MEDIUM POWER TRANSISTOR

FMMT555

ISSUE 4 – AUGUST 2003

FEATURES

150 Volt V_CEO

1 Amp continuous current

COMPLEMENTARY TYPE –

PARTMARKING DETAIL –

FMMT455

555

SOT23

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_CM

VALUE

UNIT

Collector-Base Voltage

-160

Collector-Emitter Voltage

Emitter-Base Voltage

-150

-5

Peak Pulse Current

-2

-1

Continuous Collector Current

Base Current

I_C

I_B

-200

°C

Power Dissipation at T_amb= 25°C

Operating and Storage Temperature Range

P_tot

500

T_j:T_stg

-55 to +150

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherw ise stated).

am b

PARAMETER

SYMBOL MIN.

MAX

UNIT

CONDITIONS.

I_C=-100 A

Collector-Base

Breakdown Voltage

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

-160

-150

-5

Collector-Emitter

Breakdown Voltage

I_C=-10mA*

I_E=-100 A

V_CB=-140V

Emitter-Base

Breakdown Voltage

Collector Cut-Off Current

Emitter Cut-Off Current

-0.1

-10

_CB=-140V, T_amb=100°C

I_EBO

-0.1

-0.3

_EB=-4V

Collector-Emitter

Saturation Voltage

V_CE(sat)

I_C=-100mA, I_B=-10mA*

I_C=-100mA, V_CE=-10V*

Base-Emitter

Saturation Voltage

V_BE(sat)

V_BE(on)

h_FE

-1

Base-Emitter

Turn-on Voltage

Static Forward Current

Transfer Ratio

I_C=-10mA, V_CE=-10V*

I_C=-300mA, V_CE=-10V*

300

Transition Frequency

f_T

100

MHz

I_C=-50mA, V_CE=-10V

f=100MHz

Output Capacitance

C_obo

V_CB=-10V, f=1MHz

* Measured under pulsed conditions. Pulse width=300 s. Duty cycle 2%

Spice parameter data is available upon request for this device

3 - 131

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