SD1528-06
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
.
DESIGNED FOR HIGH POWER PULSED
IFF, DME, TACAN APPLICATIONS
20 W (typ.) IFF 1030 - 1090 MHz
15 W (min.) DME 1025 - 1150 MHz
15 W (typ.) TACAN 960 - 1215 MHz
REFRACTORY GOLD METALLIZATION
EMITTER BALLASTED AND LOW
THERMAL RESISTANCE FOR
RELIABILITY AND RUGGEDNESS
20:1 LOAD VSWR CAPABILITY @
SPECIFIED OPERATING CONDITIONS
INPUT MATCHED, COMMON BASE
CONFIGURATION
.
.
.
.
.
.280 4 LFL (M115)
epoxy sealed
ORDER CODE
SD1528-06
BRANDING
.
1528-6
.
PIN CONNECTION
DESCRIPTION
The SD1528-06 is a gold metallized epitaxial silicon
NPN power transistor. The SD1528-06 is designed
for applications requiring high peak power and
low duty cycles such as IFF, DME and TACAN.
The SD1528-06 is packaged in the .280” input
matched stripline package, resulting in improved
broadband performance and low thermal resist-
ance.
1. Collector
2. Base
3. Emitter
4. Base
°
= 25 C)
ABSOLUTE MAXIMUM RATINGS (T
case
Symbol
VCBO
VCES
VEBO
IC
Parameter
Value
65
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
65
V
3.5
V
1.5
A
PDISS
TJ
Power Dissipation
87.5
+200
W
°
°
Junction Temperature
Storage Temperature
C
C
TSTG
65 to +150
−
THERMAL DATA
RTH(j-c)
Junction-Case Thermal Resistance
2.0
°C/W
1/4
November 1992