CXG1045N

更新时间： 2024-01-04 17:54:49

品牌	Logo	应用领域
索尼 - SONY		射频和微波开关射频开关微波开关光电二极管 GSM
页数	文件大小	规格书
5页	66K
描述
High Power DPDT Switch for GSM

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CXG1045N 技术参数

CXG1045N

High Power DPDT Switch for GSM

For the availability of this product, please contact the sales office.

Description

8 pin SSOP (Plastic)

The CXG1045N is a DPDT (Dual Pole Dual Throw)

antenna switch MMIC used in personal communication

handsets such as GSM, GSM1800 or dualband. This

IC is designed using the Sony's GaAs J-FET process.

Features

• Low insertion loss:

0.4dB (Typ.) @900MHz

0.7dB (Typ.) @1.8GHz

• High power switching P1dB: 38dBm (Typ.) @900MHz

37dBm (Typ.) @1.8GHz

• Small package SSOP-8pin: (3 × 6.4 × 1.25mm)

• Low current:

200µA (Typ.)

Application

• GSM900 or GSM1800 handsets

• GSM900/GSM1800 dualband handsets

Structure

GaAs J-FET MMIC

Operating Condition

Control voltage: Vctl (H) – Vctl (L): 2.5 to 5V @Ta = 25°C

GaAs MMICs are ESD sensitive devices. Special handling precautions are required.

Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by

any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the

operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.

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E98902A92-PS

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