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CXG1100TN PDF预览

CXG1100TN

更新时间: 2024-02-28 00:17:43
品牌 Logo 应用领域
索尼 - SONY ISM频段射频微波光电二极管
页数 文件大小 规格书
4页 58K
描述
DPDT, 900MHz Max, 1 Func, 0.6dB Insertion Loss-Max, GAAS, PLASTIC, TSSOP-10

CXG1100TN 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:TSSOP10,.13,20
Reach Compliance Code:unknown风险等级:5.15
Is Samacsys:N1dB压缩点:35 dBm
特性阻抗:50 Ω构造:COMPONENT
最大插入损耗:0.6 dB最小隔离度:20 dB
JESD-609代码:e6/e4安装特点:SURFACE MOUNT
功能数量:1端子数量:10
准时:1 µs最大工作频率:900 MHz
最高工作温度:85 °C最低工作温度:-35 °C
封装主体材料:PLASTIC/EPOXY封装等效代码:TSSOP10,.13,20
电源:3 V射频/微波设备类型:DPDT
子类别:RF/Microwave Switches表面贴装:YES
技术:GAAS端子面层:TIN BISMUTH/PALLADIUM
最大电压驻波比:1.4Base Number Matches:1

CXG1100TN 数据手册

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CXG1100TN  
High Power DPDT Switch with Logic Control  
For the availability of this product, please contact the sales office.  
Description  
10 pin TSSOP (Plastic)  
The CXG1100TN is a high power DPDT switch MMIC.  
This IC can be used in wireless communi-cation  
systems, for example, dual-band CDMA handsets.  
The CXG1100TN can be operated by CMOS control.  
The Sony’s JFET process is used for low insertion  
loss and on-chip logic circuit.  
Features  
Low insertion loss: 0.35dB @900MHz  
High linearity: IIP3 (Typ.) = 60dBm  
1 CMOS compatible control line  
Small package size: 10-pin TSSOP  
Applications  
Dual band cellular handsets  
CDMA and GPS, dual band CDMA  
Structure  
GaAs J-FET MMIC  
Absolute Maximum Ratings (Ta = 25°C)  
Bias voltage  
VDD  
Vctl  
7
5
V
V
Control voltage  
Operating temperature Topr  
Storage temperature Tstg  
–35 to +85  
°C  
–65 to +150 °C  
GaAs MMICs are ESD sensitive devices. Special handling precautions are required.  
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by  
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the  
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.  
– 1 –  
E01433C2X-PS  

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