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BR25H010FVM-2CTR PDF预览
型号:
BR25H010FVM-2CTR
Datasheet下载:
下载Datasheet文件
产品描述:
EEPROM, 128X8, Serial, CMOS, PDSO8, MSOP-8
应用标签:
可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟光电二极管内存集成电路
文档页数/大小:
35页 / 1116K
品牌Logo:
品牌名称:
ROHM [ ROHM ]

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是否Rohs认证
符合
生命周期
Active
IHS 制造商
ROHM CO LTD
包装说明
MSOP-8
Reach Compliance Code
compliant
风险等级
1.72
其他特性
ALSO OPERATES AT 2.5V WITH 5MHZ
最大时钟频率 (fCLK)
10 MHz
数据保留时间-最小值
100
耐久性
1000000 Write/Erase Cycles
JESD-30 代码
R-PDSO-G8
长度
2.9 mm
内存密度
1024 bit
内存集成电路类型
EEPROM
内存宽度
8
功能数量
1
端子数量
8
字数
128 words
字数代码
128
工作模式
SYNCHRONOUS
最高工作温度
125 °C
最低工作温度
-40 °C
组织
128X8
封装主体材料
PLASTIC/EPOXY
封装代码
VSSOP
封装等效代码
TSSOP8,.16
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH
并行/串行
SERIAL
峰值回流温度(摄氏度)
NOT SPECIFIED
电源
3/5 V
认证状态
Not Qualified
筛选级别
AEC-Q100
座面最大高度
0.9 mm
串行总线类型
SPI
最大待机电流
0.00001 A
子类别
EEPROMs
最大压摆率
0.004 mA
最大供电电压 (Vsup)
5.5 V
最小供电电压 (Vsup)
4.5 V
标称供电电压 (Vsup)
5 V
表面贴装
YES
技术
CMOS
温度等级
AUTOMOTIVE
端子形式
GULL WING
端子节距
0.65 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
宽度
2.8 mm
最长写入周期时间 (tWC)
4 ms
写保护
HARDWARE
Base Number Matches
1
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Datasheet
Serial EEPROM Series Automotive EEPROM
125℃ Operation SPI BUS EEPROM
BR25H010-2C
●General
Description
BR25H010-2C is a serial EEPROM of SPI BUS interface method.
●Features
High speed clock action up to 10MHz (Max.)
Wait function by HOLDB terminal.
Part or whole of memory arrays settable as read only
memory area by program.
2.5V to 5.5V single power source action most
suitable
for battery use.
Page write mode useful for initial value write at
factory shipment.
For SPI bus interface (CPOL, CPHA)=(0, 0), (1, 1)
Self-timed programming cycle.
Low Supply Current
At write operation (5V)
: 1.0mA (Typ.)
At read operation (5V)
: 1.0mA (Typ.)
At standby operation (5V) : 0.1μA (Typ.)
Address auto increment function at read operation
Prevention of write mistake
Write prohibition at power on.
Write prohibition by command code (WRDI).
Write prohibition by WPB pin.
Write prohibition block setting by status registers
(BP1, BP0).
Prevention of write mistake at low voltage.
MSOP8, TSSOP-B8, SOP8, SOP-J8 Package
Data at shipment Memory array: FFh, status register
BP1, BP0 : 0
More than 100 years data retention.
More than 1 million write cycles.
AEC-Q100 Qualified.
●Package
MSOP8
2.90mm x 4.00mm x 0.90mm
TSSOP-B8
3.00mm x 6.40mm x 1.20mm
SOP8
5.00mm x 6.20mm x 1.71mm
●Page
write
Number of pages
Product Number
SOP-J8
4.90mm x 6.00mm x 1.65mm
16 Byte
BR25H010-2C
●BR25H010-2C
Capacity
Bit format
1Kbit
128x8
Product Number
BR25H010-2C
Supply Voltage
2.5V to 5.5V
MSOP8
TSSOP-B8
SOP8
SOP-J8
○Product
structure:Silicon monolithic integrated circuit
www.rohm.com
©2013 ROHM Co., Ltd. All rights reserved.
TSZ22111・14・001
○This
product is not designed protection against radioactive rays
1/32
TSZ02201-0R1R0G100070-1-2
21.Mar.2013 Rev.001