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N02M0818L1AN-85I

更新时间： 2024-01-16 21:51:49
品牌 Logo 应用领域
NANOAMP 医疗静态存储器
页数 文件大小 规格书
9页 225K
描述
2Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 256Kx8 bit

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N02M0818L1AN-85I 技术参数

生命周期：Transferred包装说明：STSOP1-32
Reach Compliance Code：unknown风险等级：5.79
最长访问时间：85 nsJESD-30 代码：R-PDSO-G32
长度：11.8 mm内存密度：2097152 bit
内存集成电路类型：STANDARD SRAM内存宽度：8
功能数量：1端子数量：32
字数：262144 words字数代码：256000
工作模式：ASYNCHRONOUS最高工作温度：85 °C
最低工作温度：-40 °C组织：256KX8
封装主体材料：PLASTIC/EPOXY封装代码：LSSOP
封装形状：RECTANGULAR封装形式：SMALL OUTLINE, LOW PROFILE, SHRINK PITCH
并行/串行：PARALLEL认证状态：Not Qualified
座面最大高度：1.25 mm最大供电电压 (Vsup)：2.3 V
最小供电电压 (Vsup)：1.7 V标称供电电压 (Vsup)：1.8 V
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子形式：GULL WING
端子节距：0.5 mm端子位置：DUAL
宽度：8 mmBase Number Matches：1

N02M0818L1AN-85I 数据手册

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NanoAmp Solutions, Inc.  
670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035  
ph: 408-935-7777, FAX: 408-935-7770  
www.nanoamp.com  
N02M0818L1A  
2Mb Ultra-Low Power Asynchronous Medical CMOS SRAM  
256Kx8 bit  
Overview  
Features  
The N02M0818L1A is an integrated memory  
device intended for non life-support (Class 1 or  
2) medical applications. This device comprises a  
2 Mbit Static Random Access Memory organized  
as 262,144 words by 8 bits. The device is designed  
and fabricated using NanoAmp’s advanced CMOS  
technology with reliability inhancements for  
• Single Wide Power Supply Range  
1.4 to 2.3 Volts - STSOP package  
• Dual Power Supply - Die Only  
1.4 to 2.3 Volts - VCC  
1.4 to 3.6 Volts - VCCQ  
• Very low standby current  
200nA maximum at 2.0V and 37 deg C  
medical users. The base design is the same as  
NanoAmp’s N02M0818L2A, which has further  
reliability processing for life-support (Class 3)  
medical applications. The device operates with two  
chip enable (CE1 and CE2) controls and output  
enable (OE) to allow for easy memory expansion.  
The N02M0818L1A is optimal for various  
• Very low operating current  
1 mA at 2.0V and 1µs (Typical)  
• Very low Page Mode operating current  
0.5mA at 1.0V and 1µs (Typical)  
• Simple memory control  
Dual Chip Enables (CE1 and CE2)  
Output Enable (OE) for memory expansion  
applications where low-power is critical such as  
battery backup and hand-held devices. The device  
can operate over a very wide temperature range of  
• Low voltage data retention  
o
o
Vcc = 1.2V  
-40 C to +85 C and is available in JEDEC  
standard packages compatible with other standard  
256Kb x 8 SRAMs  
• Automatic power down to standby mode  
• Special Processing to reduce Soft Error Rate  
(SER)  
Product Family  
Standby  
Current  
Operating  
Current (Icc),  
Max  
Operating  
Power  
Part Number  
Package Type  
Speed  
Temperature Supply (Vcc)  
(ISB), Max  
N02M0818L1AN  
32 - STSOP I  
85ns @ 1.7V  
150ns @ 1.4V  
-40oC to +85oC  
1.4V - 2.3V  
20 µA  
2.5 mA @ 1MHz  
N02M0818L1AD Known Good Die  
Pin Configuration  
Pin Descriptions  
Pin Name  
A0-A17  
WE  
CE1, CE2  
OE  
Pin Function  
OE  
A11  
A9  
1
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
A10  
CE 1  
I/O7  
I/O6  
I/O5  
I/O4  
I/O3  
V
2
Address Inputs  
Write Enable Input  
Chip Enable Input  
Output Enable Input  
Data Inputs/Outputs  
Output Power (die only)  
Power  
A8  
3
A13  
WE  
CE2  
A15  
VCC  
A17  
A16  
A14  
A12  
A7  
4
5
6
7
N02M0818L1A  
STSOP  
8
9
I/O0-I/O7  
10  
11  
12  
13  
14  
15  
16  
I/OS S2  
I/O1  
I/O0  
A0  
VCCQ  
VCC  
VSS  
A6  
A1  
Ground  
A5  
A2  
A4  
A3  
Stock No. 23208-01 11/01/02  
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.  
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