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2N5018

更新时间: 2024-01-23 23:55:58
品牌 Logo 应用领域
MICROSS 晶体开关晶体管
页数 文件大小 规格书
1页 304K
描述
a single P-Channel JFET switch

2N5018 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:,Reach Compliance Code:not_compliant
风险等级:5.46FET 技术:JUNCTION
最高工作温度:200 °C极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):1.8 W子类别:FET General Purpose Small Signal
表面贴装:NO

2N5018 数据手册

  
2N5018  
P-CHANNEL JFET  
Linear Systems replaces discontinued Siliconix 2N5018  
The 2N5018 is a single P-Channel JFET switch  
FEATURES  
This p-channel analog switch is designed to provide low  
DIRECT REPLACEMENT FOR SILICONIX 2N5018  
ZERO OFFSET VOLTAGE  
on-resistance and fast switching.  
LOW ON RESISTANCE  
ABSOLUTE MAXIMUM RATINGS  
@ 25°C (unless otherwise noted)  
rDS(on) 75Ω  
The hermetically sealed TO-18 package is well suited  
for hi-reliability and harsh environment applications.  
(See Packaging Information).  
Maximum Temperatures  
Storage Temperature  
Operating Junction Temperature  
Maximum Power Dissipation  
Continuous Power Dissipation  
MAXIMUM CURRENT  
2N5018 Benefits:  
55°C to +200°C  
55°C to +200°C  
ƒ
Low Insertion Loss  
ƒ
No offset or error voltage generated by closed  
switch  
500mW  
ƒ
Purely resistive  
2N5018 Applications:  
Gate Current (Note 1)  
IG = 50mA  
ƒ
ƒ
ƒ
Analog Switches  
Commutators  
Choppers  
MAXIMUM VOLTAGES  
Gate to Drain Voltage  
Gate to Source Voltage  
VGDS = 30V  
VGSS = 30V  
2N5018 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)  
SYMBOL  
BVGSS  
VGS(off)  
VDS(on)  
IDSS  
CHARACTERISTIC  
Gate to Source Breakdown Voltage  
Gate to Source Cutoff Voltage  
Drain to Source On Voltage  
Drain to Source Saturation Current (Note 2)  
Gate Reverse Current  
MIN  
30  
‐‐  
‐‐  
10  
‐‐  
‐‐  
‐‐  
‐‐  
‐‐  
TYP.  
‐‐  
‐‐  
‐‐  
‐‐  
‐‐  
‐‐  
‐‐  
‐‐  
MAX  
‐‐  
10  
0.5  
‐‐  
UNITS  
V
CONDITIONS  
IG = 1µA, VDS = 0V  
VDS = 15V, ID = 1µA  
VGS = 0V, ID = 6mA  
VDS = 20V, VGS = 0V  
VGS = 15V, VDS = 0V  
VDS = 15V, VGS = 12V  
VDS = 15V, VGS = 7V  
VDG = 15V, IS = 0A  
ID = 1mA, VGS = 0V  
mA  
nA  
IGSS  
ID(off)  
2
Drain Cutoff Current  
10  
10  
2  
µA  
nA  
Ω
IDGO  
rDS(on)  
Drain Reverse Current  
Drain to Source On Resistance  
‐‐  
75  
Click To Buy  
2N5018 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)  
SYMBOL  
rDS(on)  
Ciss  
CHARACTERISTIC  
Drain to Source On Resistance  
Input Capacitance  
MIN  
‐‐  
‐‐  
TYP.  
‐‐  
‐‐  
MAX  
75  
45  
UNITS  
Ω
pF  
CONDITIONS  
ID = 0A, VGS = 0V, f = 1kHz  
VDS = 15V, VGS = 0V, f = 1MHz  
VDS = 0V, VGS = 12V, f = 1MHz  
Crss  
Reverse Transfer Capacitance  
‐‐  
‐‐  
10  
2N5018 SWITCHING CHARACTERISTICS @ 25°C (unless otherwise noted)  
SYMBOL  
td(on)  
tr  
CHARACTERISTIC  
UNITS  
CONDITIONS  
Turn On Time  
15  
20  
15  
50  
VGS(L) = 12V  
VGS(H) = 0V  
Turn On Rise Time  
ns  
td(off)  
tf  
Turn Off Time  
See Switching Circuit  
Turn Off Fall Time  
Note 1 Absolute maximum ratings are limiting values above which 2N5018 serviceability may be impaired.  
Note 2 – Pulse test: PW300 µs, Duty Cycle 3%  
SWITCHING TEST CIRCUIT  
2N5018 SWITCHING CIRCUIT PARAMETERS  
VDD  
VGG  
RL  
6V  
Available Packages:  
TO-18 (Bottom View)  
12V  
2N5018 in TO-18  
2N5018 in bare die.  
910Ω  
220Ω  
6mA  
RG  
ID(on)  
Please contact Micross for full  
package and die dimensions  
Micross Components Europe  
Tel: +44 1603 788967  
Email: chipcomponents@micross.com  
Web: http://www.micross.com/distribution  
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility  
is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication  
or otherwise under any patent or patent rights of Linear Integrated Systems.  
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email: chipcomponents@micross.com Web: www.micross.com/distribution.aspx  

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