SPP11N80C3
SPA11N80C3
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
V
800
0.45
11
V
Ω
A
DS
R
DS(on)
I
D
PG-TO220-3-31 PG-TO220
• Periodic avalanche rated
• Extreme dv/dt rated
3
• Ultra low effective capacitances
• Improved transconductance
• PG-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
2
1
P-TO220-3-31
Type
Package
Ordering Code
Marking
SPP11N80C3
PG-TO220
Q67040-S4438
11N80C3
SPA11N80C3
PG-TO220-3-31 SP000216320
11N80C3
Maximum Ratings
Parameter
Symbol
Value
Unit
SPP
SPA
Continuous drain current
I
A
D
1)
T = 25 °C
11
7.1
11
C
1)
T = 100 °C
7.1
C
Pulsed drain current, t limited by T
I
D puls
33
33
A
p
jmax
Avalanche energy, single pulse
E
470
470
mJ
AS
I =2.2A, V =50V
D
DD
2)
E
Avalanche energy, repetitive t limited by T
0.2
0.2
AR
AR
jmax
I =11A, V =50V
D
DD
Avalanche current, repetitive t limited by T
Gate source voltage
I
11
±20
30
11
±20
30
A
V
AR
jmax
AR
V
V
P
GS
GS
tot
Gate source voltage AC (f >1Hz)
Power dissipation, T = 25°C
156
41
W
C
Operating and storage temperature
T
,
T
-55...+150
°C
Rev. 2.4
Page 1
2005-08-24