Document Number: MC10XS3535
Rev. 4.0, 5/2011
Freescale Semiconductor
Advance Information
Smart Front Corner Light Switch
(Triple 10 mΩ and Dual 35 mΩ)
10XS3535
The 10XS3535 is designed for low-voltage automotive and industrial
lighting applications. Its five low RDS(ON) MOSFETs (three 10 mΩ, two
35 mΩ) can control the high sides of five separate resistive loads
(bulbs, Xenon-HID modules and LEDs).
HIGH SIDE SWITCH
Programming, control, and diagnostics are accomplished using a
16-bit SPI interface (3.3 V or 5.0 V). Each output has its own PWM
control via the SPI. The 10XS3535 has highly sophisticated failure
mode handling to provide high availability of the outputs. Its multiphase
control and output edge shaping improves electromagnetic
compatibility (EMC) behavior.
The 10XS3535 is packaged in a power-enhanced 12 x 12 nonleaded
Power QFN package with exposed tabs.
Bottom View
Features
• Triple 10 mΩ and Dual 35 mΩ high side switches
• 16-bit SPI communication interface with daisy chain capability
• Current sense output with SPI-programmable multiplex switch
and Board Temperature Feedback
PNASUFFIX
98ART10511D
24-PIN PQFN
PB FREE
• Digital diagnosis feature
• PWM module with multiphase feature including prescaler
• LEDs control including accurate current sensing and low duty-
cycle capability
• Fully-protected switches
• Over-current shutdown detection
ORDERING INFORMATION
Temperature
Device
Package
Range (T )
A
MC10XS3535PNA
-40 to 125 °C
24 PQFN
• Power net and reverse polarity protection
• Low-power mode
• Fail mode functions including autorestart feature
• External smart power switch control including current recopy
• Lead-free packaging designated by suffix code PNA
12V
5.0V
12V
10XS3535
VCC
VBAT
CP
OUT1
LIMP
FLASHER
IGN
Watchdog
OUT2
RST
CLOCK
CS
OUT3
OUT4
MCU
FOG
S0
OUT5
FETIN
FETOUT
SI
SCLK
CSNS
Smart
Switch
GND
Figure 1. 10XS3535 Simplified Application Diagram
* This document contains certain information on a new product.
Specifications and information herein are subject to change without notice.
© Freescale Semiconductor, Inc., 2010-2011. All rights reserved.